Schottky diode with adjusted barrier height and process for its manufacture
AssigneeInternational Rectifier Corporation
InventorHerbert J. Gould
Life of this patent
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Abstract
A schottky diode is formed of a sintered barrier metal layer which contacts a lightly doped silicon surface. The barrier metal layer is formed of palladium as well as a small quantity of another metal whose choice is determined by the desired value of the barrier height of the resulting schottky diode. A small quantity of platinum is selected to increase the barrier height, and a small quantity of nickel is selected to decrease the barrier height. A contact metal, which may include a tri-metal layer of titanium, nickel and silver, is formed atop the sintered schottky barrier layer. The resulting process also allows for control of reverse hot leakage current.
Claims7
A schottky diode device comprising:
- a silicon body;
- a metal suicide layer formed atop at least a portion of a surface of said silicon body and which forms a schottky barrier to said silicon body, said metal silicide layer being comprised of palladium and another metal, said another metal being selected as a function of a desired value of the barrier height of said schottky diode, said another metal further being selected from the group consisting of nickel and platinum;
- and
- a contact metal formed atop an upper surface of said metal silicide layer.
Dependencies are inferred from the claim text.