Process and system for flattening secondary edgebeads on resist coated wafers
AssigneeAdvanced Micro Devices, Inc.
InventorJonathan Alan Orth
Life of this patent
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Abstract
A method and system of flattening resist mounds formed during a wet edgebead operation. The wet edgebead operation is used to remove edgebeads formed when a resist material is deposited on a semiconductor wafer. Solvent is introduced to the semiconductor wafer at the area containing the resist mounds to soften them, and the semiconductor wafer is spun at a high speed to flatten the mounds.
Claims14
A semiconductor wafer processed in accordance with the method of flattening resist mounds formed during a wet edgebead operation, the method comprising the steps of:
- (a) introducing solvent to the semiconductor wafer at an area containing the resist mounds to soften the resist mounds;
- and
- (b) spinning the semiconductor wafer at a rate not substantially lower than 3000 revolutions per minute, or at 3000 revolutions per minute or higher to flatten the resist mounds.
A semiconductor wafer processed in accordance with the method of flattening resist mounds formed during a wet edgebead operation, the method comprising the steps of:
- (a) introducing solvent to the semiconductor wafer at an area containing the resist mounds to soften the resist mounds;
- and
- (b) spinning the semiconductor wafer simultaneously while the solvent is introduced to the semiconductor wafer in step (a) at a rate sufficient to flatten the resist mounds.
A semiconductor wafer processed in accordance with the method of flattening resist mounds formed during a wet edgebead operation, the method comprising the steps of:
- (a) introducing solvent to the semiconductor wafer at an area containing the resist mounds to soften the resist mounds while spinning the semiconductor wafer at a first rate;
- and
- (b) spinning the semiconductor wafer from the first rate to a second rate higher than the first rate while the solvent is simultaneously introduced to the semiconductor wafer at a rate sufficient to flatten the resist mounds.
A semiconductor wafer processed in accordance with the method of flattening resist mounds formed during a wet edgebead operation, the method comprising the steps of:
- (a) introducing solvent to the semiconductor wafer at an area containing the resist mounds to soften the resist mounds while spinning the semiconductor wafer;
- and
- (b) spinning the semiconductor wafer while the solvent is simultaneously introduced to the semiconductor wafer at a rate sufficient to flatten the resist mounds.
A semiconductor wafer processed in accordance with the method of flattening resist mounds formed during a wet edgebead operation, the method comprising the steps of:
- (a) spinning the semiconductor wafer while the solvent is simultaneously introduced to the semiconductor wafer at a rate sufficient to flatten the resist mounds;
- and
- (b) exposing the flattened resist mounds deposited onto the semiconductor wafer edge to light to remove the flattened resist mounds.
A semiconductor wafer processed in accordance with the method of flattening resist mounds formed during a wet edgebead operation, the method comprising the steps of:
- (a) spinning the semiconductor wafer while the solvent is simultaneously introduced to the semiconductor wafer at a rate of approximately 3000 revolutions per minute or higher to flatten the resist mounds;
- and
- (b) exposing the flattened resist mounds deposited onto the semiconductor wafer edge to light to remove the flattened resist mounds.
A resist coated semiconductor wafer manufactured according to a method of depositing resist material onto a semiconductor wafer having an edge, the method comprising the steps of:
- (a) depositing the resist material onto the semiconductor wafer;
- (b) performing a wet edgebead operation to remove edgebeads formed at the edge of the semiconductor wafer during said depositing step (a);
- and
- (c) performing a secondary edgebead removal operation to remove secondary edgebeads formed during step (b).
A resist coated semiconductor wafer manufactured according to a method of flattening resist mounds formed during a wet edgebead operation, the wet edgebead operation used to remove edgebeads formed when a resist material is deposited on a semiconductor wafer, the method comprising the steps of:
- (a) introducing solvent to the semiconductor wafer at an area containing the resist mounds to soften the resist mounds;
- and
- (b) spinning the semiconductor wafer at a rate sufficient to flatten the mounds.
Dependencies are inferred from the claim text.