Method of manufacturing semi-conductor memory device using two etching patterns
AssigneeNEC Corporation
InventorYoshihiro Takaishi
Life of this patent
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Abstract
In a method of manufacturing a semiconductor device, a laminate film is formed on an insulating film which is formed on a semiconductor substrate. The laminate film is composed of a conductive layer and an insulating layer formed on the conductive layer. A first etching process is carried out to the laminate film using a first mask to form a first group of patterns for first gates and a second group of patterns. Then, a polysilicon layer for pad polysilicon films is deposited after the first etching process. Subsequently, a second etching process is carried out to the patterns of the second group using a second mask to form a third group of patterns for second gates.
Claims10
A method of manufacturing a semiconductor device, comprising:
- forming a laminate film above a semiconductor substrate, said laminate film including a conductive layer and an insulating layer formed on said conductive layer;
- performing a first etching process to said laminate film using a first mask to form a first group of patterns for first gates and a second group of patterns;
- depositing a polysilicon layer for pad polysilicon films after said first etching process;
- patterning said polysilicon layer to form said pad polysilicon films, comprising steps of:
- depositing a mask insulating film on said polysilicon layer;
- patterning said mask insulating film;
- forming side wall insulating films on side walls of the patterned mask insulating film;
- and
- patterning said polysilicon layer using the patterned mask insulating film with the side wall insulating films as a mask to form said pad polysilicon films;
- and
- performing a second etching process to said patterns of said second group using a second mask to form a third group of patterns for second gates.
A method of manufacturing a semiconductor device, comprising:
- forming a laminate film on an insulating film which is formed on a semiconductor substrate, said laminate film including a conductive layer and an insulating layer formed on said conductive layer;
- performing a first etching process to said laminate film using a first mask group of patterns for first gates group of patterns;
- depositing a polysilicon layer for pad polysilicon films after said first etching process;
- forming an oxide mask on said polysilicon layer, comprising steps of:
- depositing a mask insulating film on said polysilicon layer;
- patterning said mask insulating film;
- and
- forming side wall insulating films on side walls of the patterned mask insulating film;
- patterning said polysilicon layer using said oxide mask as a mask to form said pad polysilicon films;
- and
- performing a second etching process to said patterns of said second group using a second mask to form a third group of patterns for second gates.
A method of manufacturing a semiconductor device, comprising:
- forming a laminate film on an insulating film which is formed on a semiconductor substrate, said laminate film including a conductive layer and an insulating layer formed on said conductive layer;
- performing a first etching process to said laminate film to form first patterns such that a space between adjacent two of said first patterns can be filled with a polysilicon layer to be deposited;
- depositing said polysilicon layer;
- patterning said polysilicon layer to form pad polysilicon films, comprising steps of:
- depositing a mask insulating film on said polysilicon layer;
- patterning said mask insulating forming side wall insulating film;
- and
- forming side wall insulating films on side walls of the patterned mask insulating film;
- and
- performing a second etching process to specific ones of said first patterns to form second patterns.
Dependencies are inferred from the claim text.