Silicide glue layer for W-CVD plug application

A method of forming tungsten plug metallization in the fabrication of integrated circuits comprising:

• providing semiconductor device structures in and on a semiconductor substrate;
• providing an insulating layer covering said semiconductor device structures wherein a contact opening is made through said insulating layer to one of said semiconductor device structures;
• depositing a silicide layer conformally over the surface of said insulating layer and within said contact opening wherein said silicide layer acts as an ohmic contact and glue layer, wherein said silicide layer comprises one of the group containing TiSi2, Cosi2, NiSix, PtSi2, and PdSi2, and wherein said silicide layer is deposited to a thickness of between 200 and 500 Angstroms;
• selectively removing said silicide layer not within said contact opening;
• and
• selectively depositing a tungsten layer overlying said silicide layer within said contact opening to complete said formation of said tungsten plug metallization in said fabrication of said integrated circuit.

A method of forming tungsten plug metallization in the fabrication of integrated circuits comprising:

• providing semiconductor device structures in and on a semiconductor substrate wherein said semiconductor device structures include source and drain regions and polysilicon gate electrodes and interconnection lines and first level metal lines;
• providing a insulating layer covering said semiconductor device structures wherein a contact opening in made through said insulating layer to one of said semiconductor device structures;
• depositing a silicide layer conformally over the surface of said insulating layer and within said contact opening wherein said silicide layer acts as an ohmic contact and glue layer and wherein said silicide layer comprises one of the group containing TiSi2, CoSi2, NiSix, PtSi2, and PdSi2 and _is deposited to a thickness of between 200 and 500 Angstroms;
• depositing a tungsten layer overlying said silicide layer using WF6 gas and one of the group containing SiH2Cl2, SiH4, and H2 as precursors;
• and
• removing said tungsten layer and said silicide layer not within said contact opening to complete said formation of said tungsten plug metallization in said fabrication of said integrated circuit.