US 6,184,118 B2 · Method for preventing the peeling of the tungsten metal after the metal-etching process

Abstract

The present invention is a method for preventing the peeling phenomena of the Tungsten metal in the integrated circuit after the metal-etching process. A semiconductor's substrate is provided. An integrated circuit is manufactured in the substrate. An intermetal-dielectric layer is formed on the substrate and it has the contacting holes and the verniers. A barrier layer is also formed on the intermetal-dielectric layer. A tungsten-metal layer is then deposited on the barrier layer. The barrier layer and the tungsten-metal layer are etched back to form the plugs of the contacting holes, the spacers of the vernier and the metal stoppers, which cover the edges of the verniers. Thus, the metal stoppers have a good adhesion with the barrier layer and the peeling of the tungsten spacer is prevented.

Claims6

Dependent claims

A method for preventing the peeling of a metal layer after metal-etching, the method comprising the steps of:

forming a first metal layer on a substrate;
forming an intermetal dielectric layer on said first metal layer, said intermetal dielectric layer including contact holes and trenches;
forming a barrier layer on a surface of said intermetal dielectric layer;
forming a second metal layer on a surface of said barrier layer, said second metal layer filling said contact holes and said trenches
etching back said second metal layer to form plugs in said contact holes and spacers in said trenches;
forming a further metal layer;
and
etching back said further metal layer to form metal stoppers which cover at least an edge and only edge portion of said trenches.

5 more elements

Dependencies are inferred from the claim text.

Method for preventing the peeling of the tungsten metal after the metal-etching process

Life of this patent

Method for preventing the peeling of the tungsten metal after the metal-etching process

Life of this patent

Abstract

Claims6