Method of fabricating self-aligned silicide
AssigneeUnited Semiconductor Corp.
InventorsHung-Yu Kou, Chih-Ching Hsu
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Abstract
The present invention is directed towards a method of fabricating a self-aligned silicide on gate electrode and source/drain region of a semiconductor device. A semiconductor substrate having gate oxide layer and polysilicon layer is provided. Next, a first silicide layer is formed on polysilicon layer. The substrate is patterned and then, etched to form a gate structure. A spacer is formed on the sidewall of the gate structure and source/drain region is formed adjacent thereto. A metal layer is covered on the surface of the substrate. The substrate is performed a thermal process to convert the portion of the metal layer on gate structure and source/drain region into self-aligned silicide.
Claims24
A method of fabricating a self-aligned silicide on a gate electrode and source/drain regions of a semiconductor device, comprising the steps of:
- providing a semiconductor substrate having a gate oxide layer and a polysilicon layer;
- forming a first metal layer and a first passivation layer in sequence on the polysilicon layer;
- performing a primary thermal process to convert the first metal layer into a first silicide layer;
- defining the substrate to form a gate structure;
- forming a spacer on a sidewall of the gate structure;
- forming a second metal layer and a second passivation layer in sequence on the surface of the substrate;
- performing a first thermal process to convert a portion of the second metal layer on the gate structure and on source/drain regions into self-aligned silicide.
A method of fabricating a self-aligned silicide on a gate electrode and source/drain regions of a semiconductor device, comprising the steps of
- providing a semiconductor substrate having a gate oxide layer and a polysilicon layer;
- forming a silicide layer on the polysilicon layer;
- defining the substrate to form a gate structure;
- forming a spacer on a sidewall of the gate structure;
- forming a metal layer on the surface of the substrate;
- performing a first thermal process to convert a portion of the metal layer on the gate structure and on source/drain regions into self-aligned silicide.
Dependencies are inferred from the claim text.