Method of fabricating one-time programmable read only memory

Abstract

A method of fabricating a one-time programmable read only memory (OTP-ROM) with reduced size is disclosed. In accordance with the method of the present invention, a stacked structure is formed on a substrate. The stacked structure comprises a first oxide layer, a first polysilicon layer, and a second oxide layer formed in sequence on the substrate. The substrate beside the stacked structure is exposed by the stacked structure. An implanted region is formed in the exposed substrate beside the stacked structure. A spacer is formed on a sidewall of the stacked structure. A silicide layer is formed on the implanted region. A silicon nitride layer is formed to cover the second oxide layer, the spacer, and the silicide layer. A second polysilicon layer is formed to cover the silicon nitride layer. The second polysilicon layer is patterned to form a control gate. The first polysilicon layer is further patterned to form a floating gate.

Dependencies are inferred from the claim text.