Method for fabricating crown-type capacitor of semiconductor device

A method for fabricating a crown-type capacitor of a semiconductor device, comprising the steps of:

• forming a plurality of bit lines on the interlevel dielectric layer in a cell region and a periphery region of a substrate;
• forming a third oxide layer to fill gaps existing between said plurality of bit lines in the cell region, said third oxide layer covering on the sidewalls of the bit lines;
• forming an etch-blocking layer using CVD and a first oxide layer over the entire structure obtained by forming said third oxide layer;
• forming a plurality of via-holes by anisotropically etching said first oxide layer, said etch-blocking layer and said third oxide layer, to expose said interlevel dielectric layer in said cell region;
• forming a silicon conductive layer, for forming a lower electrode of the crown-type capacitor, over the cell region of the structure having said plurality of via-holes to make electrical contact with said interlevel dielectric layer, and then forming a second oxide layer to fill interspaces of said silicon conductive layer in the cell region;
• completing said lower electrode by anisotropically etching said second oxide layer and said silicon conductive layer, to expose said first oxide layer;
• and
• removing said first and second oxide layers.