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US 6,184,070 B2Granted
Thin film transistor and method of manufacturing the same
AssigneeLG Semicon Co., Ltd.
InventorSung Kge Park
Life of this patent
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Abstract
A thin film transistor includes a substrate, a gate electrode formed on the substrate, and including opposing edge portions and a middle portion. An insulating film is formed on the surface of the gate electrode having a greater thickness on one of the gate edge portions. An active region is formed on the surface of the insulating film and the exposed substrate. The active region includes an off-set region, a channel region, a source region, and a drain region.
Claims5
A method of manufacturing a thin film transistor, comprising the steps of:
- forming a conductive layer on a substrate;
- patterning said conductive layer to thereby form a gate electrode having first and second edge portions and a middle portion therebetween;
- forming a gate insulating layer on a surface of said gate electrode and said substrate;
- forming an insulating layer on said gate insulating layer;
- patterning said insulating layer to leave only a portion thereof disposed on said first edge portion of said gate electrode;
- forming a semiconductor layer as an active region on a remaining portion of said insulating layer and an entire surface of said gate insulating layer;
- and
- implanting impurity ions into selected portions of said semiconductor layer exposed by a mask overlying said middle portion and said first edge portion of said gate electrode, to thereby form a source region and a drain region at opposite sides of said gate electrode.
5 more elements
Dependencies are inferred from the claim text.