System and method for the real time determination of the in situ emissivity of a workpiece during processing
AssigneeEaton Corporation
InventorsJeffrey P. Hebb, Ali Shajii
Life of this patent
Estimating the term…
Abstract
A system and method for determining the reflectivity of a workpiece during processing in a heating chamber of a thermal processing apparatus. The system first determines directly the reflectivity of the workpiece outside of the heating chamber of the thermal processing apparatus, and then determines the reflectivity of the workpiece during processing within the heating chamber of the thermal processing apparatus by correlating the ex situ wafer reflectivity with the intensity of the radiation reflected from the wafer within the heating chamber.
Claims55
A method for the real-time determination of emissivity of a semiconductor wafer during processing in a heating chamber of a thermal processing apparatus, said method comprising the steps of
- determining the reflectivity of the wafer outside of the heating chamber of the thermal processing apparatus,
- determining an intensity of radiation reflected from the wafer when disposed within the heating chamber of the thermal processing apparatus,
- correlating the reflectivity of the wafer determined outside of the thermal processing apparatus with the intensity of the reflected radiation of the wafer determined within the heating chamber to determine the reflectivity of the wafer within the chamber, and
- determining the emissivity of the wafer in real time, during processing, from the correlated wafer reflectivity determined within the thermal processing apparatus.
A method for the real-time determination of emissivity of a semiconductor wafer during processing in a heating chamber of a thermal processing apparatus, said method comprising the steps of
- generally uniformly illuminating the wafer outside of said thermal processing apparatus,
- determining the reflectivity of the generally uniformly illuminated wafer,
- generally illuminating the wafer within the heating chamber of the thermal processing apparatus,
- determining the intensity of radiation reflected from the wafer within the heating chamber of the thermal processing apparatus,
- correlating the reflectivity of the wafer illuminated outside of the heating chamber with the intensity of the reflected radiation of the wafer determined in the heating chamber to determine the wafer reflectivity during processing, and
- determining the emissivity of the wafer in real time during processing from the wafer reflectivity.
A system for determining in real-time the emissivity of a semiconductor wafer during processing in a heating chamber of a thermal processing apparatus, said system comprising
- reflectivity determination means for determining the reflectivity of the wafer outside of the heating chamber of the thermal processing apparatus,
- intensity determination means for determining an intensity of radiation reflected from the wafer when disposed within the heating chamber of the thermal processing apparatus,
- correlation means for correlating the reflectivity of the wafer determined outside of the thermal processing apparatus with the intensity of the reflected radiation of the wafer determined within the heating chamber to determine the reflectivity of the wafer within the chamber, and
- emissivity determination means for determining the emissivity of the wafer in real time, during processing, from the correlated wafer reflectivity determined within the thermal processing apparatus.
A system for the real-time determination of emissivity of a semiconductor wafer during processing in a heating chamber of a thermal processing apparatus, said system comprising
- a radiation stage including a radiation source for generally uniformly illuminating the wafer outside of the heating chamber of the thermal processing apparatus,
- means for determining the reflectivity of the generally uniformly illuminated wafer,
- means for generally illuminating the wafer within the heating chamber of the thermal processing apparatus,
- means for determining the intensity of radiation reflected from the wafer within the heating chamber of the thermal processing apparatus,
- means for correlating the reflectivity of the wafer illuminated outside of the heating chamber with the intensity of the reflected radiation of the wafer determined in the heating chamber to determine the wafer reflectivity during processing, and
- means for determining the emissivity of the wafer in real time during processing from the wafer reflectivity.
A system for the real-time determination of emissivity of a semiconductor wafer during processing in a heating chamber of a thermal processing apparatus, said system comprising
- a radiation stage including a radiation source for generally uniformly illuminating the wafer outside of the heating chamber of the thermal processing apparatus,
- a programmed processor for determining the reflectivity of the generally uniformly illuminated wafer,
- a second radiation source for illuminating the wafer within the heating chamber of the thermal processing apparatus,
- a detector for determining the intensity of radiation reflected from the wafer within the heating chamber of the thermal processing apparatus,
- means for correlating the reflectivity of the wafer illuminated outside of the heating chamber with the intensity of the reflected radiation of the wafer determined in the heating chamber to determine the wafer reflectivity during processing, and
- means for determining the emissivity of the wafer in real time during processing from the wafer reflectivity.
Dependencies are inferred from the claim text.