Pass-through semiconductor wafer processing tool and process for gas treating a moving semiconductor wafer

A process for treating a moving semiconductor wafer with process gas in a pass-through wafer-processing tool comprising an open-ended, non-isolated processing module, said process comprising:

• a) moving said wafer into said pass-through wafer-processing tool through a wafer entry in said processing module and along a wafer passage dimensioned to accommodate travel of said wafer through said processing module;
• b) moving said wafer past an entry vacuum manifold adjacent said wafer entry;
• c) moving said wafer past a gas manifold that delivers said process gas onto said moving wafer;
• d) moving said wafer past an exit vacuum manifold adjacent a wafer exit in said processing module;
• and
• e) moving said wafer out of said pass-through wafer-processing tool through a wafer exit in said processing module.

A process for treating a moving semiconductor wafer with process gas in a pass-through wafer-processing tool comprising a processing module, said process comprising:

• a) moving said wafer into said pass-through wafer-processing tool through a wafer entry in said processing module and along a wafer passage dimensioned to accommodate travel of said wafer through said processing module;
• b) moving said wafer past an entry vacuum manifold adjacent said wafer entry;
• c) moving said wafer past a gas manifold that delivers said process gas onto said moving wafer;
• d) moving said wafer past an exit vacuum manifold adjacent a wafer exit in said processing module;
• and
• e) moving said wafer out of said pass-through wafer-processing tool through a wafer exit in said processing module;
• wherein said wafer has a forward portion and a rear portion and said wafer moves in a forward direction in which said forward portion of said wafer completes steps (a) through (e) sequentially before said rear portion of said wafer begins step (a).

A plasma-generating device for exposing a moving semiconductor wafer to a plasma, said device comprising:

• a robotic handler for moving said wafer, said robotic handler forming a bottom electrode underneath said wafer;
• a top electrode mounted above said wafer;
• reactive gas between said top electrode and said wafer;
• and
• an RF source connected to said top electrode and delivering sufficient RF energy to generate a plasma from said reactive gas between said top electrode and said wafer.

A process for exposing a moving semiconductor wafer to a plasma, said process comprising:

• a) placing said semiconductor wafer on a robotic handler forming a bottom electrode underneath said wafer;
• b) moving said wafer with said robotic handler in a path underneath a top electrode mounted above said moving wafer;
• c) delivering a reactive gas between said top electrode and said wafer;
• and
• d) delivering RF energy to said top electrode sufficient to generate a plasma from said reactive gas between said top electrode and said wafer.