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US 6,171,661 B2Granted
Deposition of copper with increased adhesion
AssigneeApplied Materials, Inc.
InventorsBo Zheng, Ling Chen, Alfred Mak, Mei Chang
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Abstract
A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.
Claims26
A method of processing a substrate comprising the steps of:
- (a) chemical vapor depositing a seed layer consisting essentially of copper upon said substrate;
- and
- (b) after said step (a), treating the copper seed layer through ion bombardment to cause the copper seed layer to adhere to an upper surface of the substrate.
A method for forming a layer of copper over a layer of material on a wafer, said method comprising the steps of:
- (a) placing the wafer in a processing chamber;
- (b) chemical vapor depositing a seed layer consisting essentially of copper on the layer of material, while the wafer is in the processing chamber;
- and
- (c) after said step (b), treating the copper seed layer through ion bombardment to cause the copper seed layer to adhere to an upper surface of the layer of material, while the wafer is in the processing chamber.
1 more element
Dependencies are inferred from the claim text.