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US 6,162,702 AGranted
Self-supported ultra thin silicon wafer process
AssigneeIntersil Corporation
InventorsWilliam R. Morcom, Stephen C. Ahrens, Jeffrey P. Spindler, Raymond T. Ford, Jeffrey E. Lauffer
Life of this patent
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Abstract
A silicon wafer 2 has an ultra thin central portion 2 that is supported by a circumferential rim 3 of thicker silicon. The central region is thinned by conventional means using conventional removal apparatus. As an alternative method, the central portion is removed using a photoresist mask or a combination of a photoresist mask and a hard mask.
Claims13
A method for forming an ultra thin wafer comprising the steps of:
- providing a semiconductor wafer;
- depositing a mask on one surface of the wafer, patterning the mask to define a support area;
- removing selected portions of the wafer from one surface thereof to provide one or more ultra thin regions;
- and
- leaving further selected portions on the surface of the wafer to support the ultra thin regions.
2 more elements
Dependencies are inferred from the claim text.