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US 6,162,323 AGranted
Plasma processing apparatus
AssigneesTokyo Electron Yamanashi Limited, Japan Science and Technology Corporation
InventorChishio Koshimizu
Life of this patent
Estimating the term…
Abstract
The processing chamber of an etching apparatus is divided into a plasma generating space and a processing space by a grid electrode. A first feed gas is supplied from a gas source unit to the plasma generating space through a first flow control valve mechanism and a first gas supply line. A second feed gas is supplied from the gas source unit to the processing space through a second flow control valve mechanism and a second gas supply line. The interior of the processing chamber is evacuated by an exhaust pump through an exhaust line connected to the processing space. Each of the first and second flow control valve mechanisms has a plurality of valves whose opening degrees are separately controlled by a CPU.
Claims20
An apparatus for subjecting a target object to an etching process by using a plasma, comprising:
- an airtight processing chamber;
- a grid electrode that divides said processing chamber into a plasma generating space and a processing space, said grid electrode having a plurality of through holes for allowing said plasma generating space and said processing space to communicate with each other;
- a potential applying mechanism configured to apply a potential to said grid electrode;
- an exciting mechanism configured to excite a gas in said plasma generating space to convert the gas into a plasma;
- a support member configured to support the target object in said processing space;
- a gas supply system having a plurality of gas sources of a reactive gas and an inert gas for performing said etching process, said gas supply system comprising first and second gas supply lines connected to said plasma generating space and said processing space, respectively, and said first and second gas supply lines being connected to said gas sources through first and second flow control valve mechanisms, respectively, which provide a mixture of said reactive gas and said inert gas to each of said first and second gas supply lines;
- a controller configured to control opening degrees of said first and second flow control valve mechanisms in order to flow first and second feed gases, each containing said reactive gas and said inert gas, to said first and second gas supply lines, said controller further configured to change compositions and flow rates of the first and second feed gases separately;
- and
- an exhaust system configured to evacuate an interior of said processing chamber and setting said interior of said processing chamber at a vacuum,
- wherein said controller sets compositions and flow rates of the first and second feed gases by controlling the opening degrees of said first and second flow control valve mechanisms, respectively, in accordance with an etching property for said etching process.
7 more elements
An apparatus for subjecting a target object to an etching process by using a plasma, comprising:
- an airtight processing chamber;
- a grid electrode that divides said processing chamber into a plasma generating space and a processing space, said grid electrode having a plurality of through holes for allowing said plasma generating space and said processing space to communicate with each other;
- a potential applying mechanism configured to apply a potential to said grid electrode;
- an exciting mechanism configured to excite a gas in said plasma generating space to convert the gas into a plasma;
- a support member configured to support the target object in said processing space;
- a gas supply system having a plurality of gas sources of a reactive gas and an inert gas for performing said etching process, said gas supply system comprising first and second gas supply lines connected to said plasma generating space and said processing space, respectively, said first gas supply line being connected to said gas sources through a first flow control valve mechanism, which includes a flow control valve connected to the gas source of the reactive gas and a flow control valve connected to the gas source of the inert gas, and said second gas supply line being connected to said gas sources through a second flow control valve mechanism, which includes a flow control valve connected to the gas source of the reactive gas and a flow control valve connected to the gas source of the inert gas, said first and second flow control mechanism thereby providing a mixture of said reactive gas and said inert gas to each of said first and second gas supply lines;
- a controller configured to control said first and second flow control valve mechanisms by adjusting opening degrees of the flow control valves in order to flow first and second feed gases, each containing said reactive gas and said inert gas, to said first and second gas supply lines, said controller further configured to change compositions and flow rates of the first and second feed gases separately, wherein said controller sets compositions and flow rates of the first and second feed gases by controlling the opening degrees of said first and second flow control valve mechanisms, respectively, in accordance with an etching property for said etching process;
- and
- an exhaust system configured to evacuate an interior of said processing chamber and setting said interior of said processing chamber at a vacuum, wherein said exhaust system comprises an exhaust line connected to at least one of said processing space and said plasma generating space to exhaust said processing space and said plasma generating space.
6 more elements
Dependencies are inferred from the claim text.