Exposure apparatus and method

An exposure apparatus for aligning a wafer and mask, and transferring a pattern on the mask onto the wafer, said apparatus comprising:

• a wafer stage for mounting a wafer formed with an alignment mark;
• a mask holder for holding a mask formed with an alignment light transmission portion at a position outside an exposure field angle;
• a detection unit for detecting a position of the alignment mark by irradiating the alignment mark with alignment light via the alignment light transmission portion;
• a calculation unit for calculating a positional deviation between a first pattern formed on the wafer and a second pattern formed on the mask on the basis of a detection result of said detection unit, a position of the alignment mark in the wafer, and a position of the alignment light transmission portion in the mask;
• and
• an actuator for adjusting a positional relationship between the wafer and mask on the basis of a calculation result of said calculation unit to make the first and second patterns overlap each other.

An exposure apparatus for aligning a wafer and mask, and transferring a pattern on the mask onto the wafer, said apparatus comprising:

• a wafer stage for mounting a wafer formed with an alignment mark;
• a mask holder formed with an alignment light transmission portion at a position outside of an exposure field angle;
• a detection unit for detecting a position of the alignment mark by irradiating the alignment mark with alignment light via the alignment light transmission portion;
• a calculation unit for calculating a positional deviation between a first pattern formed on the wafer and a second pattern formed on a mask on the basis of a detection result of said detection unit, a position of the alignment mark in the wafer, and a positional relationship between the alignment light transmission portion and the mask held by said mask holder;
• and
• an actuator for adjusting a positional relationship between the wafer and mask on the basis of a calculation result of said calculation unit to make the first and second patterns overlap each other.

An exposure method for aligning a wafer and mask, and transferring a pattern on the mask onto the wafer, said method comprising:

• the detection step of optically detecting a positional deviation between a first alignment mark formed on a wafer and a second alignment mark formed on a mask outside an exposure field angle;
• the calculation step of calculating a positional deviation between a first pattern formed on the wafer and a second pattern formed on the mask on the basis of a detection result in the detection step, a position of the first alignment mark in the wafer, and a position of the second alignment mark in the mask;
• and
• the adjustment step of adjusting a positional relationship between the wafer and mask on the basis of a calculation result in the calculation step to make the first and second patterns overlap each other.

An exposure method for aligning a wafer and mask, and transferring a pattern on the mask onto the wafer, said method comprising:

• the detection step of detecting a position of an alignment mark formed on a wafer by irradiating the alignment mark with alignment light via an alignment light transmission portion formed on a mask outside an exposure field angle;
• the calculation step of calculating a positional deviation between a first pattern formed on the wafer and a second pattern formed on the mask on the basis of a detection result in the detection step, a position of the alignment mark in the wafer, and a position of the alignment light transmission portion in the mask;
• and
• the adjustment step of adjusting a positional relationship between the wafer and mask on the basis of a calculation result in the calculation step to make the first and second patterns overlap each other.

An exposure method for aligning a wafer and mask, and transferring a pattern on the mask onto the wafer, said method comprising:

• the detection step of detecting a position of an alignment mark formed on a wafer by irradiating the alignment mark with alignment light via an alignment light transmission portion formed on a mask holder at a position outside of an exposure field angle;
• the calculation step of calculating a positional deviation between a first pattern formed on the wafer and a second pattern formed on a mask on the basis of a detection result in the detection step, a position of the alignment mark in the wafer, and a positional relationship between the alignment light transmission portion and the mask held by said mask holder;
• and
• the adjustment step of adjusting a positional relationship between the wafer and the mask on the basis of a calculation result in the calculation step to make the first and second patterns overlap each other.