Lateral high-voltage semiconductor device having an outwardly extended electrode
AssigneeKabushiki Kaisha Toshiba
InventorsHideyuki Funaki, Akio Nakagawa, Fumito Suzuki
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Abstract
The breakdown strength of a lateral diode using a field plate is improved. There are provided a track-like first field plate connected to an anode electrode, a track-like second field plate formed outside the first field plate and connected to a cathode electrode, track-like third field plates provided concentrically between the first and second field plates, and fourth field plates provided so as to cross the first to third field plates and connected to each of them. The fourth field plates are so positioned that they allow more current to flow in the corner sections and under the electrodes where an electric field is liable to concentrate.
Claims20
A lateral high-voltage semiconductor device comprising:
- a first semiconductor region;
- a second semiconductor region;
- a field plate arranged between said first semiconductor region and said second semiconductor regions;
- a first electrode being connected to said first semiconductor region, and being arranged in a manner such that said first electrode crosses over said field plate and extends outwardly;
- a second electrode connected to said second semiconductor region;
- and
- a first current path located below said first electrode and connected to said field plate in a manner such that said first current path crosses said field plate.
A lateral high-voltage semiconductor device comprising:
- a semiconductor substrate;
- a first conductivity-type semiconductor region selectively formed at the surface of said semiconductor substrate;
- a second conductivity-type semiconductor region being selectively formed at the surface of said semiconductor substrate;
- a field insulating film being provided on said semiconductor substrate to be located between said first conductivity-type semiconductor region and said second conductivity-type semiconductor region;
- a first field plate being provided on said field insulating film so as to surround said first conductivity-type semiconductor region, said first field plate being electrically connected to said first conductivity-type semiconductor region;
- a second field plate being provided on said field insulating film, and being electrically connected to said second conductivity-type semiconductor region;
- at least one third field plate being provided concentrically on said field insulating film, said at least one third field plate being arranged between said first field plate and said second field plate;
- at least one fourth field plate for connecting said first field plate, said third field plates, and said second field plate to one another;
- and
- an electrode being connected to said first conductivity-type semiconductor region, said electrode extending outwardly in such a manner that said electrode crosses over said first, second, third, and fourth field plates,
- wherein said fourth field plate is located below said electrode.
A lateral high-voltage semiconductor device having a first conductive region, a second conductive region surrounding the first conductive region, a field plate interposed between the first and second conductive regions, and an electrode extended outwardly from the first conductive region over the field plate, said field plate comprising:
- at least one first electric field generating element located at the corner section of said field plate;
- at least one second electric field generating element which is connected to said first electric field generating element and has a resistance higher than said first electric field generating element;
- and
- at least one current supply path for supplying current to said first electric field generating element and said second electric field generating element.
Dependencies are inferred from the claim text.