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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsToshiaki Iwamatsu, Yasuo Yamaguchi, Takashi Ipposhi, Shigenobu Maeda, Yuichi Hirano
Estimating the term…
A semiconductor substrate and a method of fabricating a semiconductor device are provided. An oxide film (13) is formed by oxidizing an edge section and a lower major surface of an SOI substrate (10). This oxidizing step is performed in a manner similar to LOCOS (Local Oxide of Silicon) oxidation by using an oxide film (11) exposed on the edge section and lower major surface of the SOI substrate (10) as an underlying oxide film. Then, the thickness of the oxide film (13) is greater than that of the oxide film (11) on the edge section and lower major surface of the SOI substrate (10). The semiconductor substrate prevents particles of dust from being produced at the edge thereof.
A semiconductor substrate having a first major surface, a second major surface opposite from said first major surface, and a side surface, said first major surface including a central section in which active regions are to be formed and a peripheral section, said peripheral section and said side surface defining an edge section, said semiconductor substrate comprising:
A semiconductor substrate having a first major surface, a second major surface opposite from said first major surface, and a side surface, said first major surface including a central section in which active regions are to be formed and a peripheral section, said peripheral section and said side surface defining an edge section, said semiconductor substrate comprising:
A semiconductor substrate having a first major surface, a second major surface opposite from said first major surface, and a side surface, said first major surface including a central section in which active regions are to be formed and a peripheral section, said peripheral section and said side surface defining an edge section, said semiconductor substrate comprising:
Dependencies are inferred from the claim text.