Semiconductor device with filed-effect transistors of a complementary type and method of manufacturing the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsMotoi Ashida, Masayuki Yamashita, Kiyoyasu Akai
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Abstract
A semiconductor device prevents latch up and enables subminiaturization of its structure, and a method can manufacture the semiconductor device. In the semiconductor device containing field-effect transistors of a complementary type, an interconnection containing semiconductor having n-type impurity connects a p-type impurity diffusion region forming an emitter electrode of a parasitically formed bipolar transistor to an n-type impurity diffusion region electrically connected to a power supply line. Thereby, a pn junction operating as a rectifier element is formed at a contact region between a connection portion and the p-type impurity diffusion region.
Claims13
A semiconductor device comprising:
- a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type formed at a main surface of a semiconductor substrate and neighboring to each other;
- a first impurity region of the first conductivity type formed at the main surface of said first semiconductor region and electrically connected to a power supply line or a ground line;
- a second impurity region of the second conductivity type formed at the main surface of said first semiconductor region;
- a third impurity region of the first conductivity type formed at the main surface of said second semiconductor region and electrically connected to the power supply line or the ground line;
- and
- a connection portion containing semiconductor and formed in contact with said first and second impurity regions, wherein
- a distance between said second and third impurity regions is 2.0 .mu.m or less.
A semiconductor device comprising:
- a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type formed at a main surface of a semiconductor substrate and neighboring to each other;
- a first impurity region of the first conductivity type formed at the main surface of said first semiconductor region and electrically connected to a power supply line or a ground line;
- a second impurity region of the second conductivity type formed at the main surface of said first semiconductor region;
- a third impurity region of the first conductivity type formed at the main surface of said second semiconductor region and electrically connected to the power supply line or the ground line;
- and
- a connection portion containing semiconductor and formed in contact with said first and second impurity regions, wherein
- an isolating oxide film having a width of 2.0 .mu.m or less is formed at the surface of said semiconductor substrate between said second and third impurity regions.
A semiconductor device comprising:
- field-effect transistors of a complementary type;
- first and second bipolar transistors parasitically formed, and parasitically forming a thyristor;
- and
- a rectifier element electrically connected to an emitter electrode of said first bipolar transistor and a power supply portion, wherein
- said first bipolar transistor has a base electrode electrically connected to said power supply portion, wherein
- a reverse resistance R1 of said rectifier element and an ON resistance R2 of a p-type field-effect transistor forming said field-effect transistor of the complementary type satisfy a relationship of:
- R2/100<R1<100.times.R2.
Dependencies are inferred from the claim text.