Selective removal of etching residues
AssigneeInternational Business Machines Corporation
InventorsDavid L. Rath, Rangarajan Jagannathan, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Karen P. Madden, Keith R. Pope
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Abstract
Etching residue is selectively removed employing a substantially non-aqueous composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include an anhydride.
Claims40
A method for selectively removing etching residues which comprises contacting an article containing said residues and at least one member selected from the group consisting of metal, silicon, silicide and interlevel dielectric materials with a substantially non-aqueous cleaning composition containing about 0.05 to about 3 molar of a fluoride containing compound and an organic solvent, to thereby selectively etch said residues at a rate greater than said member.
A substantially non-aqueous cleaning composition suitable for removing etching residue and containing about 0.05 to about 3.0 molar of a fluoride containing compound, an organic solvent and positive amount of an anhydride sufficient to render said composition substantially non-aqueous wherein said organic solvent is selected from the group consisting of oxolanes, sulfolanes, esters, ketones, aldehydes, lactones, halogenated hydrocarbons, alcohols, amines and imides.
A substantially non-aqueous cleaning composition suitable for removing etching residue and containing about 0.05 to about 3.0 molar of a fluoride containing compound, an organic solvent and positive amount of an anhydride sufficient to render said composition substantially non-aqueous, and further comprising a tertiary amine.
Dependencies are inferred from the claim text.