Method of fabricating small dimension wires
AssigneeUnited Microelectronics Corp.
InventorsKevin Lin, Ching-Chiao Hao, Kun-Chi Lin
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AssigneeUnited Microelectronics Corp.
InventorsKevin Lin, Ching-Chiao Hao, Kun-Chi Lin
Estimating the term…
A method of forming small dimension wires by an isotropic removal process. The method provides a substrate with an insulation layer. A first conductive layer and a second conductive layer are formed on the insulation layer. A wire pattern is formed on a photoresist layer after the coating process and the sequential exposure and development process. Part of the second conductive layer is removed by using the wire pattern on the photoresist layer as a mask, and thus part of the second conductive layer with wires is remained. Isotropic etching the peripheral part of the second conductive layer and thus the part of wire pattern with a smaller dimension is remained. Using the wire pattern with a smaller dimension as a mask to anisotropic etch the first conductive layer until the surface of the insulation layer is exposed, and thus the process of fabricating small dimension is finished.
A method of fabricating a plurality of small dimension bit lines on a substrate comprising an insulation layer, wherein a first conductive layer is on the insulation layer and a second conductive layer is on the first conductive layer, the method comprising the steps of:
A method of fabricating small dimension wires formed on a substrate comprising an insulation layer, wherein a first conductive layer is on the insulation layer, and a second conductive layer is on the first conductive layer the method comprising the steps of:
A method for fabricating a bit line structure, wherein a substrate comprising an insulation layer formed thereon is provided, comprising:
Dependencies are inferred from the claim text.