US 6,150,261 AGranted

Method of fabricating semiconductor device for preventing antenna effect

AssigneeUnited Microelectronics Corp.

InventorsChen-Chung Hsu, Yih-Jau Chang

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Abstract

A method of fabricating a semiconductor device for preventing an antenna effect. In the invention, there is no additional mask layer or specific process performed. Thus, the fabrication cost does not increase. In addition, extra electrons are released through a path formed in the invention during the plasma-etching step. An antenna effect thus does not occur. The reliability of the semiconductor device is increased.

Claims11

Dependent claims

A method of fabricating a semiconductor device for preventing an antenna effect, comprising the steps of:

forming an isolation structure in a semiconductor substrate to define an active region next to the isolation structure;
forming a gate comprising a polysilicon layer on the isolation structure;
forming a dielectric layer over the substrate;
patterning the dielectric layer to form a first opening and a second opening, wherein the first opening exposes a portion of the substrate in the active region and the second opening exposes a portion of the polysilicon layer of the gate;
forming a conductive layer on the dielectric layer to fill the first opening and the second opening;
removing a portion of the conductive layer until the surface of the conductive layer is level with the surface of the dielectric layer;
forming a patterned metallic layer that exposes a portion of the dielectric layer, wherein the metallic layer comprises a first metallic layer and a second metallic layer, the first metallic layer covers a portion of the dielectric layer, and the second metallic layer covers the conductive layer and a portion of the dielectric layer;
forming a dielectric layer over the substrate;
patterning the dielectric layer to form a first opening and a second opening, wherein the first opening exposes a portion of the first metallic layer, and the second opening exposes a portion of the second metallic layer;
forming a glue/barrier layer and a tungsten layer over the substrate;
removing portions of the tungsten layer and the glue/barrier layer to form a tungsten plug and a first remaining glue/barrier layer in the first opening, and a tungsten spacer and a second remaining glue/barrier layer on a sidewall of the second opening;
forming a third metallic layer over the substrate;
forming a patterned photoresist layer on the third metallic layer above the tungsten plug;
removing a portion of the third metallic layer and the second metallic layer with the photoresist layer and the tungsten spacer serving as masks;
and
removing the photoresist layer and the spacer.

13 more elements

Dependencies are inferred from the claim text.

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Abstract

A method of fabricating a semiconductor device for preventing an antenna effect, comprising the steps of:

forming an isolation structure in a semiconductor substrate to define an active region next to the isolation structure;
forming a gate comprising a polysilicon layer on the isolation structure;
forming a dielectric layer over the substrate;
patterning the dielectric layer to form a first opening and a second opening, wherein the first opening exposes a portion of the substrate in the active region and the second opening exposes a portion of the polysilicon layer of the gate;
forming a conductive layer on the dielectric layer to fill the first opening and the second opening;
removing a portion of the conductive layer until the surface of the conductive layer is level with the surface of the dielectric layer;
forming a patterned metallic layer that exposes a portion of the dielectric layer, wherein the metallic layer comprises a first metallic layer and a second metallic layer, the first metallic layer covers a portion of the dielectric layer, and the second metallic layer covers the conductive layer and a portion of the dielectric layer;
forming a dielectric layer over the substrate;
patterning the dielectric layer to form a first opening and a second opening, wherein the first opening exposes a portion of the first metallic layer, and the second opening exposes a portion of the second metallic layer;
forming a glue/barrier layer and a tungsten layer over the substrate;
removing portions of the tungsten layer and the glue/barrier layer to form a tungsten plug and a first remaining glue/barrier layer in the first opening, and a tungsten spacer and a second remaining glue/barrier layer on a sidewall of the second opening;
forming a third metallic layer over the substrate;
forming a patterned photoresist layer on the third metallic layer above the tungsten plug;
removing a portion of the third metallic layer and the second metallic layer with the photoresist layer and the tungsten spacer serving as masks;
and
removing the photoresist layer and the spacer.

13 more elements