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US 6,150,251 AGranted
Method of fabricating gate
AssigneeUnited Microelectronics Corp.
InventorsTri-Rung Yew, Water Lur
Life of this patent
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Abstract
A method for fabricating a gate. A gate oxide layer is formed on a substrate. A first doped polysilicon layer is formed on the gate oxide layer. A second doped polysilicon layer on the first doped polysilicon layer. A third doped polysilicon layer over the second polysilicon layer. The second doped polysilicon layer has a grain size larger than a grain size of both the first doped polysilicon layer and the third dope polysilicon layer.
Claims15
A method of fabricating a gate, comprising the steps of:
- forming a gate oxide layer on a substrate;
- forming a first amorphous silicon layer on the gate oxide layer;
- forming a polysilicon layer on the first amorphous silicon layer;
- forming a second amorphous silicon layer on the polysilicon layer to form a sandwich structure comprising of the polysilicon layer between the amorphous silicon layers, wherein the second amorphous silicon layer is an uppermost layer of the sandwich structure;
- and
- patterning the sandwich structure to form the gate.
3 more elements
A method of fabricating a gate, comprising the steps of:
- forming a gate oxide layer on a substrate;
- forming a first doped polysilicon layer on the gate oxide layer;
- forming a second doped polysilicon layer on the first doped polysilicon layer;
- and
- forming a third doped polysilicon layer over the second polysilicon layer,
- wherein the second doped polysilicon layer is formed to have a grain size that is larger than a grain size of both the first doped polysilicon layer and the third doped polysilicon layer formed as recited above.
3 more elements
A method of fabricating a gate, comprising the steps of:
- forming a first amorphous silicon layer on a substrate;
- forming a first polysilicon layer on the first amorphous silicon layer;
- forming a second amorphous silicon layer on the first polysilicon layer;
- and
- transforming the first amorphous silicon layer and the second amorphous silicon layer into the polysilicon layers.
2 more elements
Dependencies are inferred from the claim text.