Method for fabricating semiconductor device

A method for fabricating a semiconductor device, said semiconductor device including a silicide film of a metal having positive oxide generation energy larger than oxide generation energy of silicon,

• the method of comprising the steps of:
• depositing a film made of said metal over a surface of a silicon region, and
• conducting a heat treatment for producing a silicidation reaction between at least part of said metal film and at least part of said silicon region and thereby forming said metallic silicide film,
• wherein said heat treatment step is conducted within a reducing ambient containing ammonium with said cobalt film exposed.

A method for fabricating a semiconductor device, said semiconductor device including a silicide film of a metal having positive oxide generation energy larger than oxide generation energy of silicon,

• the method comprising the steps of:
• forming a transistor structure, said transistor structure including a substrate, source/drain regions formed in a silicon region in a surface region of said substrate, a channel region interposed between said source region and said drain region in the surface region of the silicon region, a gate insulating film formed over said channel region, a gate electrode formed on said gate insulating film, and insulating sidewalls covering sides of said gate electrode;
• depositing a cobalt film such that said cobalt film covers an exposed part of the silicon region in said transistor structure;
• and
• forming a cobalt silicide film to be self-aligned with and to overlap said source/drain regions and said gate electrode by conducting a heat treatment in an ambient containing ammonium gas with said cobalt film exposed.