Method for fabricating a trench isolation
AssigneeMosel Vitelic, Inc.
InventorsChih-Ta Wu, Wen-Jet Su, Tun-Fu Hung, Ming-Ren Chi
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Abstract
A method for fabricating a trench isolation is disclosed. First, a first insulated layer having a void is formed within the trench of the semiconductor. Next, the upper portion of said first insulated layer is etched to remove the void of said first insulated layer. Then, a second insulated layer having a void is formed over the first insulated layer. Next, the upper portion of said second insulated layer is etched to remove the void of said second insulated layer, thereby forming a trench isolation including the remainder of said first and second insulated layers.
Claims14
A method for fabricating a trench isolation suitable for a semiconductor substrate having a trench comprising the steps of:
- forming a first insulated layer having a void within the trench;
- etching the upper portion of said first insulated layer to remove the void of said first insulated layer;
- forming a second insulated layer having a void over said first insulated layer;
- and
- etching the upper portion of said second insulated layer to remove the void of the second insulated layer, thereby forming a trench isolation including the remainder of said first and second insulated layers.
A method for fabricating a trench isolation, comprising the steps of:
- providing a semiconductor having a trench;
- forming a first oxide layer having a void within the trench by chemical vapor deposition;
- etching the upper portion of said first oxide layer to remove the void of said first oxide layer;
- and
- forming a second oxide layer having a void over the first oxide layer by chemical vapor deposition;
- etching the upper portion of said second oxide layer to remove said void of the second oxide layer;
- forming a third oxide layer having a void over the second oxide layer by chemical vapor deposition;
- and
- etching the upper portion of said third oxide layer to remove said void of the third oxide layer, thereby forming a trench isolation including the remainder of said first, second, and third oxide layers.
A method for fabricating a trench isolation, comprising the steps of:
- providing a semiconductor substrate having a trench;
- forming a first oxide layer having a void within the trench by chemical vapor deposition;
- annealing said first oxide layer to densify said first oxide layer;
- wet etching the upper portion of said densified first oxide layer to remove the void of said first oxide layer;
- forming a second oxide layer having a void over the first oxide layer by chemical vapor deposition;
- annealing said second oxide layer to densify said second oxide layer;
- wet etching the upper portion of said densified second oxide layer to remove the void of said second oxide layer, thereby forming a trench isolation including the remainder of said first and second oxide layers.
Dependencies are inferred from the claim text.