Trench separator for self-defining discontinuous film
AssigneeInternational Business Machines Corporation
InventorsDavid E. Kotecki, William H. Ma
Life of this patent
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Abstract
A discontinuous film structure on a substrate, with an etch stop layer on the substrate, a separator layer with an opening formed therein on the etch stop layer and a discontinuous-as-deposited film on the separator layer, the discontinuity substantially in register with the opening. The structure is made into a stacked capacitor with the discontinuous film being the bottom electrode, by forming a continuous dielectric layer on the bottom electrode and a continuous top electrode layer on the dielectric layer.
Claims10
A method for making a discontinuous film structure on a substrate, comprising the steps of:
- forming an etch stop on the substrate;
- forming a separator on the etch stop, the separator having a trench with a first width formed therein down to the etch stop layer, the separator being formed by
- forming a separator layer on the etch stop,
- forming a disposable mask layer on the separator layer,
- patterning the disposable layer to form sidewalls spaced a first distance apart, and
- using the disposable layer and sidewalls as a mask to etch the trench;
- and
- forming a discontinuous-as-deposited film on the separator, the discontinuity substantially in register with the trench.
Dependencies are inferred from the claim text.