Method for simutaneously forming bit-line contacts and node contacts
AssigneeUnited Microelectronics Corp.
InventorsChia-Wen Liang, Hal Lee
Life of this patent
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Abstract
A method for simultaneously forming a bit-line contact and a node contact first forms a polysilicon layer and a first insulator on a substrate, and then patterns patterning the polysilicon layer and the first insulator, wherein the substrate consists of an active area and an isolation area. Next, a second insulator is formed on the exposed substrate and the first insulator. Then, by forming a photoresist layer on the second insulator and patterning the photoresist layer, a pattern containing a bit-line contact pattern and a node contact pattern is transferred onto the second insulator. By performing an etching back process on the second insulator, the bit-line contact and the node contact are formed simultaneously in a self-aligned way.
Claims16
A method for simultaneously forming a bit-line contact and a node contact, the method comprising:
- providing a substrate;
- forming a polysilicon layer on the substrate;
- forming a first insulator on the polysilicon layer;
- patterning the first insulator and the polysilicon layer to expose a portion of the substrate;
- forming a second insulator on the exposed portion of the substrate and the first insulator, wherein the second insulator has a thickness;
- forming a photoresist layer on the second insulator;
- patterning the photoresist layer;
- and
- removing a portion of the second insulator, to simultaneously form a spacer abutting on either side of the polysilicon layer and the first insulator, and leave portions of the second insulator on a top surface of the first insulator, and to form the bit-line contact and the node contact, wherein the bit-line contact and the node contact are continuous.
A method for simultaneously forming a bit-line contact and a node contact, the method comprising:
- providing a substrate;
- forming a polysilicon layer on the substrate;
- forming a first insulator on the polysilicon layer;
- patterning the first insulator and the polysilicon layer to expose a portion of the substrate;
- forming a second insulator on the exposed portion of the substrate and the first insulator;
- removing a portion of the second insulator, wherein the second insulator has a thickness;
- forming a photoresist layer on the second insulator;
- patterning the photoresist layer to form a pattern on the photoresist layer,
- wherein the pattern contains a bit-line contact pattern and a node contact pattern, wherein the pattern is a continuous pattern;
- transferring the pattern onto the second insulator;
- and removing a portion of the second insulator, to simultaneously form leave a spacer abutting on either side of the polysilicon layer and the first insulator and leave portions of the second insulator on a top surface of the first insulator, and to form the bit-line contact and the node contact.
A method for simultaneously forming a bit-line contact and a node contact, the method comprising the steps of:
- forming a polysilicon layer on a substrate;
- forming a first insulator on the polysilicon layer;
- patterning the first insulator and the polysilicon layer to expose a portion of the substrate and a sidewall of the polysilicon layer;
- forming a conformal second insulator abutting the exposed portion of the substrate, the sidewall of the polysilicon layer and the first insulator;
- forming a photoresist layer on the second insulator to expose a portion of the second insulator, wherein the portion of the second insulator corresponds to the polysilicon layer and a bit-line contact region and a node contact region formed in the subsequent steps;
- and
- after the forming step of the photoresist layer, etching the exposed portion of the second insulator, to simultaneously form a spacer on the first insulator and the sidewall of the polysilicon layer and leave portions of the second insulator on a top surface of the first insulator, and to form the bit-line contact and the node contact, wherein the bit-line contact and the node contact are continuous.
Dependencies are inferred from the claim text.