Integrated circuits using optical fiber interconnects formed through a semiconductor wafer and methods for forming same
AssigneeMicron Technology, Inc.
InventorsJoseph E. Geusic, Kie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
An integrated circuit with a number of optical fibers that are formed in high aspect ratio holes. The high aspect ratio holes extend through a semiconductor wafer. The optical fibers include a cladding layer and a core formed in the high aspect ratio hole. These optical fibers are used to transmit signals between functional circuits on the semiconductor wafer and functional circuits on the back of the wafer or beneath the wafer.
Claims22
A method for interconnecting first and second integrated circuits, wherein the first integrated circuit is formed on a working surface of a first semiconductor substrate, the method comprising:
- forming at least one high aspect ratio hole through the first semiconductor substrate;
- forming an optical fiber with a cladding layer and a core in the at least one high aspect ratio hole, the optical fiber having first and second ends;
- and
- coupling the first integrated circuit to the second integrated circuit through the optical fiber.
A method for forming an integrated circuit in a semiconductor wafer with an optical fiber that extends through the semiconductor wafer, the method comprising:
- forming a functional circuit in a first surface of the semiconductor wafer;
- forming a number of etch pits in the first surface of the semiconductor wafer at selected locations in the functional circuit;
- performing an anodic etch of the semiconductor wafer such that high aspect ratio holes are formed through the semiconductor wafer from the first surface to a second, opposite surface;
- forming a cladding layer of an optical fiber on an inner surface of the high aspect ratio holes;
- forming a core layer of the optical fiber;
- and
- selectively coupling the optical fiber to the functional circuit.
A method for forming an optical fiber through a semiconductor substrate, the method comprising:
- forming at least one high aspect ratio hole through the semiconductor substrate that passes through the semiconductor substrate from a first working surface to a surface opposite the first working surface;
- forming a cladding layer of an optical fiber on an inner surface of the at least one high aspect ratio hole;
- and
- forming a core layer of the optical fiber.
Dependencies are inferred from the claim text.