Method for manufacturing metal oxide capacitor and method for manufacturing semiconductor memory device
AssigneeTexas Instruments Incorporated
InventorsYukio Fukuda, Katsuhiro Aoki, Akitoshi Nishimura, Ken Numata
Life of this patent
Estimating the term…
Abstract
A metal oxide capacitor is manufactured by sequentially laminating a metal oxide film and a secon electrode on a first electrode. The metal oxide film is formed and then heat-treated in an atmosphere with an oxygen pressure higher than 1 atm.
Claims14
A method for manufacturing a metal oxide capacitor comprising in manufacturing a metal oxide capacitor in which a metal oxide film and a second electrode are sequentially laminated on a first electrode, the above-mentioned metal oxide film is formed and then heat-treated in an atmosphere with an oxygen pressure higher than 1 atm.
A method of manufacturing a microelectronic capacitor comprising:
- a. forming a first capacitor electrode over a semiconductor substrate;
- b. applying a metal oxide film to the first electrode;
- c. forming a second electrode over the metal oxide film to form a capacitor;
- and
- d. heat treating the metal oxide film subsequent to forming the second electrode in an atmosphere of oxygen with a pressure higher than 1 atm and at a temperature less than 600.degree. C.
A method of manufacturing a microelectronic capacitor for a semiconductor memory element comprising:
- a. forming a first capacitor electrode over a semiconductor substrate;
- b. applying a metal oxide film to the first electrode;
- c. forming a second electrode over the metal oxide film to form a capacitor;
- and
- d. heat treating the metal oxide film subsequent to forming the second electrode in an atmosphere of oxygen with a pressure higher than 1 atm and at a temperature below about 550.degree. C.
Dependencies are inferred from the claim text.