Method of manufacturing a shallow trench isolation structure for a semiconductor device

A method for manufacturing a shallow trench isolation structure for a semiconductor device, said method comprising the steps of:

• forming a first resist having a first pattern on a semiconductor substrate;
• forming a trench in a semiconductor substrate by etching said semiconductor while using said first resist as a mask;
• removing said first resist;
• forming a first material directly deposited on said semiconductor substrate, said first material filling said trench and having an inclined surface extending outward from edges of said trench, a surface of said first material within said trench being flat, a lower portion of the inclined surface being in contact with the edges of said trench;
• forming a second material directly deposited on said first material;
• forming a second resist having an inverted pattern of the first resist pattern;
• etching said second material while using said second resist as a mask to leave said second material to cover an entire surface of said first material within said trench, said second material functioning as an etching stopper;
• and
• removing said first material outside said trench.