Non-volatile storage latch
AssigneeHoneywell Inc.
InventorsAllan T. Hurst, Jr., Jeff S. Sather, Jason B. Gadbois
Life of this patent
Estimating the term…
Abstract
In one aspect of the present invention, a non-volatile latching element is provided that includes one or more magnetic elements therein. By programming the magnetic elements to appropriate resistance values, the latching element assumes a pre-programmed state upon power up. The magnetic elements are preferably programmed using either a one or two layer word line. In another aspect of the present invention, the magnetic elements are formed as pseudo-spin valve structures utilizing only CoFe as the active ferromagnetic layers, with one ferromagnetic layer thinner than the other. This simplifies the design while maintaining the high moment material to achieve large GMR ratios.
Claims11
Apparatus for writing a first magnetic element to a first state and a second magnetic element to a second state, comprising:
- a word line carrying a word line current wherein the word line current produces a magnetic field, said word line extending adjacent to the first and second magnetic elements and oriented such that the magnetic field at the first magnetic element writes the first state into the first magnetic element, and such that the magnetic field at the second magnetic element writes the second state into the second magnetic element;
- and
- word line current providing means coupled to the word line for selectively providing the word line current.
Apparatus for writing a magnetic element to a desired one of two states, comprising:
- a first word line carrying a first word line current, said first word line extending adjacent one side of the magnetic element;
- a second word line carrying a second word line current, said second word line extending adjacent an opposite side of the magnetic element parallel to said first word line;
- word line current providing means coupled to said first word line and said second word line for selectively providing the first word line current to write the magnetic element to a first one of the two states and for selectively providing the second word line current to write the magnetic element to a second one of the two states.
An apparatus for writing a magnetic element to a desired one of two states comprising a word line extending adjacent to at least two opposite sides of the magnetic element, said word line on one side of the magnetic element being substantially parallel to the word line on the opposite side of the magnetic element.
A method for writing a first magnetic element to a first state and a second magnetic element to a second state, comprising the step of:
- passing a word line current in a first direction adjacent the first and second magnetic elements, wherein the word line current extends past a first side of the first magnetic element and an opposite side of the second magnetic element such that the magnetic field produced by the word line current at the first magnetic element writes the first state into the first magnetic element, and such that the magnetic field produced by the word line current at the second magnetic element writes the second state into the second magnetic element.
A method for writing a magnetic element to a desired one of two states, comprising:
- providing a first word line current adjacent a first side of the magnetic element to write the magnetic element to a first one of the two states;
- providing a second word line current adjacent an opposite side of the magnetic element, parallel to the first word line current, to write the magnetic element to a second one of the two states.
A method for writing a magnetic element to a desired one of two states:
- providing a word line current adjacent a first side of the magnetic element and then looping back to extend adjacent an opposite side of the magnetic element, parallel to the first word line current on the first side of the magnetic element, to write the magnetic element to a first one of the two states;
- and
- providing a word line current adjacent the opposite side of the magnetic element and then looping back to extend adjacent the first side of the magnetic element, parallel to the first word line current on the second side of the magnetic element, to write the magnetic element to a second one of the two states.
Dependencies are inferred from the claim text.