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US 6,147,387 AGranted
Static random access memory
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYoshiyuki Ishigaki
Life of this patent
Estimating the term…
Abstract
An SRAM is provided with a high-resistance element for loading including a high-resistance portion, which extends onto adjacent memory cell. An interlayer insulating film is formed between the high-resistance portions.
Claims9
A static random access memory, comprising:
- a first high-resistance element for loading formed by a first conductive layer including a first high-resistance portion;
- an interlayer insulating film formed to cover said first high-resistance element for loading;
- and
- a second high-resistance element for loading formed on said interlayer insulating film by a second conductive layer including a second high-resistance portion, said second high-resistance element partially overlapping but electrically isolated from the first high-resistance element.
1 more element
Dependencies are inferred from the claim text.