Semiconductor device and method of producing the same
AssigneeNEC Corporation
InventorTadahiko Horiuchi
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Abstract
A semiconductor device of the present invention is a semiconductor device of a complementary MIS field effect transistor, wherein an anode of a first diode is connected to a silicon substrate of a first conduction type while a cathode of the first diode is connected to a first power supply while a cathode of a second diode is connected to a well of the other conduction type and an anode of the second diode is connected to a second power supply.
Claims4
A semiconductor device of a complementary MIS field effect transistor, wherein an anode of a first diode is connected to a silicon substrate well of a first conduction type while a cathode of said first diode is connected to a first power supply while a cathode of a second diode is connected to a silicon substrate well of the other conduction type and an anode of said second diode is connected to a second power supply.
Dependencies are inferred from the claim text.