SCR and current divider structure of electrostatic discharge protective circuit
AssigneeWinbond Electronics Corp.
InventorsWei-Fan Chen, Fu-Chien Chiu, Ta-Lee Yu
Life of this patent
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Abstract
An electrostatic discharge protective circuit of the invention includes a silicon controller rectifier (SCR) and a current diverter. The current diverter is used to bypass an initial low current thereby to prevent the SCR from being triggered by the low current. Thus, a trigger current required to activate the SCR can be greatly increased thereby to maintain an internal circuit at a normal operating state.
Claims12
A structure of an electrostatic discharge protective circuit, comprising:
- a first-type substrate;
- a second-type well formed in the first-type substrate;
- a first second-type diffusion region formed in the second-type well and electrically coupled to a first electrode;
- a first first-type diffusion region formed in the second-type well, separated from the first second-type diffusion region and electrically coupled to the first electrode;
- a second first-type diffusion region formed in the second-type well, separated from the first first-type diffusion region and electrically coupled to a second electrode;
- a second second-type diffusion region formed in the first-type substrate separated from the second first-type diffusion region and electrically coupled to the second electrode;
- a third first-type diffusion region formed in the first-type substrate, separated from second second-type diffusion region and electrically coupled to the second electrode.
The structure of claimed 1, further comprising a gate located between the first first-type diffusion region and the second first-type diffusion region and electrically coupled to a voltage source.
A structure of an electrostatic discharge protective circuit, comprising:
- a first-type substrate;
- a second-type well formed in the first-type substrate;
- a first second-type diffusion region formed in the second-type well and electrically coupled to a first electrode,
- a first first-type diffusion region formed in the second-type well, separated from the first second-type diffusion region and electrically coupled to the first electrode;
- a second first-type diffusion region formed in the second-type well, separated from the first first-type diffusion region and electrically coupled to a second electrode;
- a gate formed between the first first-type diffusion region and the second first-type diffusion region and electrically coupled to the first electrode;
- a second second-type diffusion region formed in the first-type substrate separated from the second first-type diffusion region and electrically coupled to the second electrode;
- a third first-type diffusion region formed in the first-type substrate, separated from second second-type diffusion region and electrically coupled to the second electrode.
Dependencies are inferred from the claim text.