Cleaning gas
AssigneeCentral Glass Company, Limited
InventorsIsamu Mouri, Tetsuya Tamura, Mitsuya Ohashi, Tadayuki Kawashima
Life of this patent
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Abstract
A cleaning gas which is employed to remove an unnecessary deposited material formed in a thin film forming apparatus by thermal decomposition of pentaethoxytantalum or tetraethoxysilane without damaging a reactor, tools, parts and piping of a silicon oxide film-forming apparatus or a tantalum oxide film-forming apparatus. The cleaning gas comprises HF gas and at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluoride gas, a bromine fluoride gas and an iodine fluoride gas.
Claims8
A cleaning gas for removing an accumulated material formed on an inner surface of a thin film forming apparatus by thermal decomposition of alkoxide, said cleaning gas comprising:
- HF gas;
- and
- at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluoride gas, a bromine fluoride gas and an iodine fluoride gas.
A cleaning gas for removing an accumulated material formed on an inner surface of a thin film forming apparatus by thermal decomposition of pentaethoxytantalum, said cleaning gas comprising:
- HF gas;
- and
- at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluoride gas, a bromine fluoride gas and an iodine fluoride gas.
A cleaning gas for removing an accumulated material formed on an inner surface of a thin film forming apparatus by thermal decomposition of tetraethoxysilane, said cleaning gas comprising:
- HF gas;
- and
- at least one of an oxygen-containing gas, a fluorine gas, a bromine fluoride gas and an iodine fluoride gas.
Dependencies are inferred from the claim text.