Jet vapor reduction of the thickness of process layers
AssigneeAdvanced Micro Devices, Inc.
InventorsMark I. Gardner, Mark C. Gilmer
Life of this patent
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Abstract
The present invention is directed to a method and apparatus for reducing the thickness of a process layer. The method comprises generating a relatively high velocity gas stream comprised of active ions that will react with the process layer, and moving the wafer relative to the nozzle to effect a reduction in the thickness of the process layer. The apparatus is comprised of a process chamber, means for securing a wafer in the chamber, a nozzle having an exit that is substantially the same width as the diameter of the wafer positioned in the chamber. The apparatus further comprises a means for moving the wafer relative to the nozzle.
Claims33
A method for reducing the thickness of a process layer, comprising:
- positioning a wafer in proximity to a nozzle, said wafer having a process layer positioned on said wafer;
- generating a gas stream through said nozzle that exits said nozzle at a speed ranging from approximately 100-1200 feet per second, said gas stream comprised of active ions that will react with said process layer to form a gas;
- and
- moving said wafer relative to said nozzle.
A method for reducing the thickness of a process layer, comprising:
- positioning a wafer in proximity to a nozzle, said wafer having a process layer positioned on said wafer;
- generating a gas stream through said nozzle that exits said nozzle at a speed ranging from approximately 100-1200 feet per second, said gas stream comprised of active ions that will react with said process layer to form a gas;
- and
- moving said wafer at a speed of approximately 10-200 feet per second relative to said nozzle.
A method for reducing the thickness of a layer of silicon nitride, comprising:
- positioning a wafer in proximity to a nozzle, said wafer having a layer of silicon nitride positioned on said wafer;
- generating a gas stream through said nozzle at a speed ranging from approximately 100-1200 feet per second, said gas stream comprised of active fluorine ions that will react with said silicon nitride layer;
- and
- moving said wafer relative to said nozzle.
Dependencies are inferred from the claim text.