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US 6,146,993 AGranted
Method for forming in-situ implanted semiconductor barrier layers
AssigneeAdvanced Micro Devices, Inc.
InventorsDirk Brown, John A. Iacoponi
Life of this patent
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Abstract
A method is provided for forming barrier layers in channel or via openings of semiconductors by using in-situ nitriding of barrier metals (Ta, Ti, or W) after they have been deposited in channel and via openings which will allow better control of the barrier metal/barrier material (Ta/TaN, Ti/TiN, or W/WN) composition, eliminate particle problems, and avoiding target poisoning.
Claims18
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a semiconductor substrate with a dielectric layer formed thereon;
- forming an opening in said dielectric layer, said opening defined by walls of said dielectric layer;
- forming a barrier layer of barrier metal over said dielectric layer and in said opening, including along said walls;
- forming a barrier material in said barrier layer in-situ at a controlled temperature in a barrier gas containing atmosphere to control the depth and density of barrier material of said barrier metal whereby said barrier material is gradated to increase away from said dielectric layer;
- and
- forming a layer of conductive material in contact with barrier material in said barrier layer, said conductive material layer substantially filling said opening.
3 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a semiconductor substrate with a dielectric layer formed thereon;
- forming an opening in said dielectric layer, said opening defined by walls of said dielectric layer;
- forming a barrier metal over said dielectric layer and in said opening, including along said walls, said barrier layer including a barrier metal selected from a group comprising tantalum, titanium, tungsten, and a combination thereof;
- nitriding said barrier metal in-situ at a controlled temperature in a nitrogen containing atmosphere to control the depth and density of nitriding of said barrier metal whereby said nitriding is gradated to increase away from said dielectric layer;
- and
- forming a layer of conductive material in contact with said barrier metal, said conductive material layer substantially filling said opening.
3 more elements
Dependencies are inferred from the claim text.