Method of forming contact plug
AssigneeUnited Microelectronics Corp.
InventorShu-Jeng Sung
Life of this patent
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Abstract
A method for preventing a contact plug on a semiconductor substrate from being poisoned. A part of the metal layer with a large and flat surface region is removed to result in a plurality of metal layers with smaller surface areas on the substrate. A first dielectric layer is formed on the metal layers. A spin-on-glass layer is formed on the first dielectric layer. The spin-on-glass layer is etched back until the first dielectric layer is exposed. A second dielectric layer is formed on the spin-on-glass layer. At lease an opening is formed to penetrate through the second dielectric layer, the spin-on-glass layer and the first dielectric layer. The opening is filled with a contact plug.
Claims8
A method of forming a contact plug on a semiconductor substrate which comprises at least a metal layer having a flat surface region, comprising:
- removing a part of the metal layer to result in a plurality of metal layers with smaller surface areas on the substrate;
- forming a first dielectric layer on the metal layers;
- forming a spin-on-glass layer on the first dielectric layer;
- etching back the spin-on-glass layer until the first dielectric layer is exposed;
- forming a second dielectric layer on the spin-on-glass layer;
- forming at least an opening penetrating through the second dielectric layer, the spin-on-glass layer and the first dielectric layer;
- and
- filling the opening with a contact plug.
A method of forming a contact plug on a semiconductor substrate which comprises at least a metal layer having a flat surface region, comprising:
- patterning the metal layer to a mesh-like metal layers with an uneven surface on the substrate;
- forming a first dielectric layer on the metal layers;
- forming a spin-on-glass layer on the first dielectric layer;
- etching back the spin-on-glass layer until the first dielectric layer is exposed;
- forming a second dielectric layer on the spin-on-glass layer;
- forming at least an opening penetrating through the second dielectric layer, the spin-on-glass layer and the first dielectric layer;
- and
- filling the opening with a contact plug.
A method for preventing a contact plug on a semiconductor substrate having at least a metal with a large and flat surface area from being poisoned, comprising:
- breaking the large and flat surface area of the metal layer into an uneven surface area with recesses;
- forming a sandwich type spin-on-glass layer on the metal layer;
- forming at least an opening penetrating through the sandwich type dielectric layer to expose a part of the metal layer;
- and
- filling the opening with a contact plug.
Dependencies are inferred from the claim text.