Method of fabricating shallow trench isolation (STI)
AssigneeUnited Microelectronics Corp.
InventorsChih-Chien Liu, Cheng-Yuan Tsai, Gwo-Shii Yang, Juan-Yuan Wu
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Abstract
A method of fabricating shallow trench isolation (STI) forms a trench in a substrate and a liner oxide layer in the trench. A first high density plasma chemical vapor deposition (HDPCVD) is performed to form a conformal oxide layer on the liner oxide layer, without applying bias to the substrate. A second HDPCVD is then performed to form an oxide layer that fills the trench and covers the conformal oxide layer on the conformal oxide layer.
Claims18
A method of fabricating a semiconductor device, comprising:
- forming a masking pattern on a substrate;
- etching the substrate to form a trench in the substrate, with the masking pattern serving as an etching mask;
- forming a liner oxide layer in the trench;
- performing a first high-density plasma chemical vapor deposition (HDPCVD) to form a conformal oxide layer on the liner oxide layer and the masking pattern without applying bias to the substrate and without clamping the substrate;
- and
- performing a second HDPCVD while applying a bias to the substrate to form an oxide layer that fills the trench and covers the conformal oxide layer.
A method of fabricating a semiconductor device, comprising:
- forming a trench in a substrate;
- forming a conformal first dielectric layer in the trench;
- performing a first HDPCVD to form a conformal second dielectric layer on the first dielectric layer without applying bias to the substrate and without clamping the substrate;
- and
- performing a second HDPCVD while applying a bias to the substrate to form a third dielectric layer that fills the trench on the second dielectric layer.
A method of fabricating shallow trench isolation (STI), comprising:
- forming a trench in a substrate;
- forming a conformal first dielectric layer in the trench;
- forming a conformal second dielectric layer on the first dielectric layer by a thermal process;
- performing a HDPCVD to form a conformal third dielectric layer on the second dielectric layer without applying bias to the substrate and without clamping the substrate;
- and
- performing a second HDPCVD while applying a bias to the substrate to form a fourth dielectric layer that fills the trench on the third dielectric layer.
A method of fabricating STI, comprising:
- forming a trench on a substrate;
- forming a liner oxide layer in the trench;
- forming a silicon nitride film on the liner oxide layer by a thermal nitridation;
- performing a first high-density plasma chemical vapor deposition (HDPCVD) to form a conformal oxide layer on the silicon nitride film and the masking pattern without applying bias to the substrate and without clamping the substrate;
- and
- performing a second HDPCVD while applying a bias to the substrate to form an oxide layer that fills the trench and covers the conformal oxide layer.
Dependencies are inferred from the claim text.