US 6,146,964 A · Method of manufacturing a semiconductor device having a fin type capacitor electrode

Abstract

The method according to this invention, of manufacturing a semiconductor device includes forming a polysilicon layer on a silicon substrate, forming a first resist pattern on the polysilicon layer, introducing impurity ions into the polysilicon layer with the first resist pattern used as a mask to form a high density impurity layer within the polysilicon layer, forming a second resist pattern on the polysilicon layer at a region where the first resist pattern is formed, the second resist pattern being greater than the first resist pattern so that the region where the first resist pattern is formed and a peripheral region thereof is covered by the second resist pattern, and etching the polysilicon layer including the high density impurity layer using the second resist pattern as a mask. From the above method, a portion of the polysilicon layer located at a region not covered by the second resist layer and the high density impurity layer are etched.

Claims10

Dependent claims

A method of manufacturing a semiconductor device:

comprising:
forming a polysilicon layer on a silicon substrate;
forming a first resist pattern on the polysilicon layer;
introducing impurity ions into the polysilicon layer with the first resist pattern being used as a mask to form a high density impurity layer within the polysilicon layer;
forming a second resist pattern on the polysilicon layer at a region where the first resist pattern is formed, the second resist pattern being greater in size than the first resist pattern so that the region where the first resist pattern is formed and a peripheral region thereof is covered by the second resist pattern;
and
etching the polysilicon layer including the high density impurity layer using the second resist pattern as a mask so as to etch the high density impurity layer and a portion of the polysilicon layer not covered be the second resist layer.

4 more elements

A method of manufacturing a semiconductor device having a fin type capacitor electrode comprising:

forming a polysilicon layer on a silicon substrate;
introducing impurity ions into the polysilicon layer to form a high density impurity layer within the polysilicon layer;
forming a first resist pattern on the polysilicon layer including the high density impurity layer;
etching the polysilicon layer including the high density impurity layer, including vertically etching a portion of the polysilicon layer including the high density impurity layer not covered by the first resist layer using the first resist pattern as a mask, and horizontally etching a peripheral region of the high density impurity layer under the first resist pattern so that a fin type polysilicon layer is formed;
forming a dielectric layer on the surface of the fin type polysilicon layer;
and
forming a plate electrode layer on the dielectric layer to form a fin type capacitors,
wherein the high density impurity layer is formed in the polysilicon layer except a region surrounded by the peripheral region.

5 more elements

Dependencies are inferred from the claim text.

Method of manufacturing a semiconductor device having a fin type capacitor electrode

Life of this patent

Method of manufacturing a semiconductor device having a fin type capacitor electrode

Life of this patent

Abstract

Claims10