Method of forming mixed mode devices
AssigneeUnited Microelectronics Corp.
InventorKuang-Yeh Chang
Life of this patent
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Abstract
A method of forming mixed mode devices is provided. A field oxide layer is formed on the substrate to isolate active regions from each other. A gate oxide layer is formed on the substrate, positioned over the active regions. A first conductive layer, a silicide layer and a second conductive layer are formed on the field oxide layer and on the gate oxide layer. The second conductive layer is converted to an oxide layer as a dielectric layer of a capacitor by thermal oxidation. A third conductive layer is formed and defined on the dielectric layer to form an upper electrode of the capacitor. A anisotropic etching step is performed to remove a part of the dielectric layer, a part of the silicide layer and a part of the first conductive layer to complete the capacitor and to form a gate of a transistor.
Claims17
A method of forming mixed mode devices, comprising the steps of:
- providing a substrate;
- forming a field oxide layer on a part of the substrate;
- forming a gate oxide layer on the other part of the substrate;
- forming a first conductive layer on the gate oxide layer and on the field oxide layer;
- forming a silicide layer on the first conductive layer;
- forming a second conductive layer on the silicide layer;
- oxidizing the second conductive layer to form an oxide layer on the silicide layer;
- forming a third conductive layer on the oxide layer;
- removing a part of the third conductive layer to form a upper electrode of a capacitor over the field oxide layer;
- and
- removing a part of the oxide layer, a part of the silicide layer and a part of the first conductive layer to form a lower electrode on the field oxide layer and to form a gate on the gate oxide layer.
A method of forming mixed mode devices, comprising the steps of:
- providing a substrate, wherein the substrate at least comprises a field oxide layer and a gate oxide layer thereon;
- forming a first polysilicon layer on the gate oxide layer and on the field oxide layer;
- forming a silicide layer and a second polysilicon layer on the first polysilicon layer;
- oxidizing the second polysilicon layer to form an oxide layer on the silicide layer;
- forming an upper electrode of a capacitor positioned over the field oxide layer;
- and
- removing a part of the oxide layer, a part of the silicide layer and a part of the first polysilicon layer to form a lower electrode on the field oxide layer and to form a gate on the gate oxide layer.
Dependencies are inferred from the claim text.