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US 6,146,935 AGranted
Method for forming capacitor of semiconductor device using pre-bake
AssigneeSamsung Electronics Co., Ltd.
InventorsHong-bae Park, Cha-Young Yoo
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Abstract
A method for forming a capacitor of a semiconductor device. A lower electrode is prebaked before a dielectric layer is formed on the lower electrode. As a result, moisture or contaminants are removed from the lower electrode, increasing adhesion between the lower electrode and the dielectric layer formed on the lower electrode, thereby preventing the dielectric layer from being lifted and cracked due to inferior coating properties.
Claims9
A method of forming a capacitor of a semiconductor device, comprising the steps of:
- forming a lower electrode of a noble metal layer;
- pre-baking the lower electrode at a temperature of about 200-300.degree. C. to remove moisture or contaminants from the surface of the lower electrode, wherein said pre-baked is performed for about 30 seconds to about one minute;
- and
- after the pre-baking, forming a dielectric film using a sol-gel method on the lower electrode.
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Dependencies are inferred from the claim text.