Semiconductor wafer and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsNorihiko Tsuchiya, Hiroshi Matsushita
Life of this patent
Estimating the term…
Abstract
The average density and scattered light intensity or the average density and average size of void defects contained in a surface region in a predetermined depth of a semiconductor wafer sample are measured. An ingot whose a semiconductor wafer sample satisfies D.times.Is.ltoreq.a predetermined value between the measured average density D and scattered light intensity Is or satisfies D.times.L.sup.3 .ltoreq.fixed value between the measured average density D and average size L is extracted and wafers cut from the ingot are annealed. The semiconductor wafers having few residual defects in a surface region wherein devices are to be formed can be obtained.
Claims10
A method of manufacturing a semiconductor wafer, comprising the steps of:
- measuring an average density in plane of a semiconductor wafer sample and average size of void defects contained in a surface region in a predetermined depth of the semiconductor wafer sample;
- extracting an ingot whose semiconductor wafer sample satisfies an equation D.times.L.sup.3 .ltoreq.a predetermined value between the measured average density D and average size L;
- and
- annealing semiconductor wafers cut from the extracted ingot.
A method of manufacturing a semiconductor wafer, comprising the steps of:
- measuring an average density in plane of a semiconductor wafer sample and light scattering intensity of void defects contained in a surface region in a predetermined depth of the semiconductor wafer sample;
- extracting an ingot whose semiconductors wafer sample satisfies an equation D.times.Is.ltoreq.a predetermined value between the measured average density D and an average value Is in plane of the semiconductor wafer sample of the measured light scattering intensity;
- and
- annealing semiconductor wafers cut from the extracted ingot.
A semiconductor wafer manufactured by a semiconductor wafer manufacturing method comprising the steps of:
- measuring an average density in plane of a semiconductor wafer sample and average size of void defects contained in a surface region in a predetermined depth of the semiconductor wafer sample;
- extracting an ingot whose semiconductor wafer sample satisifies an equation D.times.L.sup.3 .ltoreq.a predetermined value between the measured average density D and average size L;
- and
- annealing semiconductor wafers cut from the extracted ingot,
- wherein the average density of void defects contained in the surface region is not more than about 30 defects/cm.sup.-2.
A semiconductor wafer manufactured by a semiconductor wafer manufacturing method comprising the steps of:
- measuring an average density in plane of a semiconductor wafer sample and light scattering intensity of void defects contained in a surface region in a predetermined depth of the semiconductor wafer sample;
- extracting an ingot whose semiconductor wafer sample satisifes an equation D.times.Is.ltoreq.a predetermined value between the measured average density D and an average value Is in plane of wafer of the measured light scattering intensity;
- and
- annealing semiconductor wafers cut from the extracted ingot,
- wherein the average density of void defects contained in the surface region is not more than about 30 defects/cm.sup.-2.
Dependencies are inferred from the claim text.