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AssigneeNEC Corporation
InventorsKatsumi Maeda, Shigeyuki Iwasa, Kaichiro Nakano, Etsuo Hasegawa
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It is an object of the present invention to provide a negative photoresist composition for lithography, using short-wavelength light such as ArF excimer laser beam as a light source. The negative photoresist composition of the present invention is a negative photoresist composition comprising at least a polymer having a unit represented by the general formula (1) ##STR1## , a crosslinking agent and a photo-acid generating agent, and the crosslinking agent is capable of crosslinking the polymer in the presence of an acid catalyst, whereby the polymer is insolubilized in a developer. Since the negative resist composition of the present invention is insolubilized in the developer by an action of an acid produced from the photo-acid generating agent at the exposed portion, a negative pattern can be obtained. Since the polymer has not a benzene ring, unlike a base polymer of a conventional negative resist, the polymer has high transparency to ArF excimer laser beam and also has high etching resistance because of its bridged alicyclic group.
A negative photoresist composition comprising a polymer having a unit represented by the general formula (1), a crosslinking agent of a compound having a functional group represented by the general formula (5), and a photo-acid generating agent capable of generating an acid by exposure. ##STR51## (in the general formula (1), R.sup.1 represents a hydrogen atom or a methyl group, and G represents an alicyclic group having a 1,2-diol structure) ##STR52## (in the general formula (5), R.sup.10 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an oxoalkyl group having 3 to 6 carbon atoms).
Dependencies are inferred from the claim text.