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US 6,146,795 AGranted
Method for manufacturing memory devices
AssigneeAdvanced Micro Devices, Inc.
InventorsJiahua Huang, Yuesong He, Kent Kuohua Chang
Life of this patent
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Abstract
Tunnel oxide degradation is reduced by reducing residual photoresist material in open areas of a mask pattern. Embodiments include detecting residual photoresist in an exposed underlying region of a substrate by x-ray spectroscopy and descumming in response to detected residual photoresist.
Claims16
A method of manufacturing a semiconductor device, which method comprises:
- applying a layer of a photoresist material to a layer on a semiconductor substrate;
- patterning the photoresist to form a mask pattern covering a region of the layer and exposing a region of the layer;
- detecting for the presence of residual photoresist in the exposed region of the layer;
- and
- employing a low powered plasma etch in response to detected residual photoresist to remove residual photoresist in the exposed region.
2 more elements
Dependencies are inferred from the claim text.