MT CVD process

A MT CVD process comprising the steps of:

• a) heating a plurality of substrates in a reaction chamber to a reaction temperature range of from about 550 to about 900.degree. C. in such a manner as to establish a temperature gradient among the substrates so that a substrate proximal to an entrance location of a deposition process gas is heated to a lower reaction temperature than a substrate distal from said entrance location, each substrate of said plurality having a surface;
• and
• b) introducing into said reaction chamber a deposition process gas comprising from about 1 to about 30% hydrogen halide and predetermined amounts of a carbon/nitrogen source, a metal-halogen compound, and H.sub.2 so that a carbonitride-containing coating deposits on said surface of each substrate of said plurality.

A MT CVD process comprising the steps of:

• a) heating at least one substrate in a reaction chamber to a reaction temperature, said at least one substrate having a surface;
• and
• b) introducing into said reaction chamber a deposition process gas comprising from about 1 to about 30% HCl and predetermined amounts of CH.sub.3 CN, TiCl.sub.4, and H.sub.2 so that a coating of TiCN deposits on said surface of said at least one substrate.

A MT CVD process comprising the steps of:

• a) heating a plurality of substrates in a reaction chamber to a reaction temperature range of from about 600 to about 900.degree. C. in such a manner as to establish a temperature gradient among the substrates so that a substrate proximal to an entrance location of a deposition process gas is heated to a lower reaction temperature than a substrate distal from said entrance location, each substrate of said plurality having a surface;
• and
• b) introducing into said reaction chamber said deposition process gas comprising from about 1 to about 30% HCl and predetermined amounts CH.sub.3 CN, TiCl.sub.4, and H.sub.2 so that a coating of TiCN deposits on said surface of each substrate of said plurality.

A MT CVD process comprising the steps of:

• a) heating a plurality of substrates in a reaction chamber to a reaction temperature range of from about 830 to about 880.degree. C. in such a manner as to establish a temperature gradient among the substrates so that a substrate proximal to an entrance location of a deposition process gas is heated to a lower reaction temperature than a substrate distal from said entrance location, each substrate of said plurality having a surface;
• and
• b) introducing into said reaction chamber said deposition process gas comprising from about 1 to about 30% HCl and predetermined amounts CH.sub.3 CN, TiCl.sub.4, H.sub.2, and N.sub.2 so that a coating of TiCN deposits on said surface of each substrate of said plurality.