Loading patent…
AssigneesMitsubishi Materials Silicon Corporation, Mitsubishi Materialc Corporation
InventorsKazushige Takaishi, Ryoko Takada
Estimating the term…
A method of treating a semiconductor substrate by first oxidizing and reducing the semiconductor substrate by immersion in an aqueous solution of ammonium hydroxide and hydrogen peroxide, and then oxidizing the semiconductor substrate by immersion in an aqueous solution of ozone, nitric acid, hydrogen peroxide, or mixtures thereof, and then reducing the oxidized semiconductor substrate by immersing it in a first aqueous solution composed of a mixture of hydrofluoric acid and an organic acid or salt thereof, thereafter rinsing the reduced semiconductor substrate by immersion in a second aqueous solution composed of a mixture of hydrofluoric acid and an organic acid or salt thereof, and then reoxidizing the rinsed semiconductor substrate by immersing it in an aqueous solution of ozone, nitric acid, hydrogen peroxide or mixtures thereof.
A method for treating a semiconductor substrate comprising:
Dependencies are inferred from the claim text.