Semiconductor integrated circuit device having field shield MOS devices

A semiconductor integrated circuit device, comprising:

• a semiconductor substrate;
• P-channel active MOSFETs formed in the semiconductor substrate and having impurity diffusion regions;
• N-channel active MOSFETs formed in the semiconductor substrate and having impurity diffusion regions;
• P-channel field shield MOS devices for electrically isolating the P-channel active MOSFETS, the P-channel field shield MOS devices having field shield electrodes formed on regions between the impurity diffusion regions of the P-channel active MOSFETS;
• and
• N-channel field shield MOS devices for electrically isolating the N-channel active MOSFETS, the N-channel field shield MOS devices having field shield electrodes formed on regions between the impurity diffusion-regions of N-channel active MOSFETS;
• wherein a P-channel field shield voltage, which is higher than a power supply voltage of the semiconductor integrated circuit, is supplied to the field shield electrodes of the P-channel field shield MOS device to turn the P-channel field shield MOS devices to an OFF-state to electrically isolate the P-channel active MOSFETS, and
• an N-channel field shield voltage, which is lower than a ground level of the semiconductor integrated circuit, is supplied to the field shield electrodes of the N-channel field shield MOS devices to turn the N-channel field shield MOS devices to an OFF-state to electrically isolate the N-channel active MOSFETS.

A semiconductor integrated circuit device, comprising:

• a semiconductor substrate;
• active transistors formed in the semiconductor substrate and having impurity diffusion regions;
• and
• field shield MOS devices having field shield electrodes formed upon a region of the substrate between the impurity diffusion regions of the active transistors;
• wherein a field shield voltage is supplied to the field shield electrodes to turn the field shield MOS devices to an OFF-state to electrically isolate the active transistors, and the voltage level of the field shield electrodes are of a higher voltage than an operation voltage of the active transistors.

A semiconductor integrated circuit device, comprising:

• a semiconductor substrate;
• active transistors formed in the semiconductor substrate and having impurity diffusion regions;
• and
• field shield MOS devices having field shield electrodes formed upon a region of the substrate between the impurity diffusion regions of the active transistors;
• wherein a field shield voltage is supplied to the field shield electrodes to turn the field shield MOS devices to an OFF-state to electrically isolate the active transistors, and the voltage level of the field shield electrodes is shifted from a range of an operation voltage of the active transistors;
• said semiconductor integrated circuit device, further comprising:
• a plurality of circuit blocks which have the active transistors to be isolated and the field shield MOS devices;
• and
• field shield voltage generating means for generating field shield voltages having different voltage levels, which are supplied to the field shield electrodes of the field shield MOS devices of one or more of the plurality circuit blocks to electrically isolate the active transistors of the circuit blocks;
• and
• wherein different voltage levels are supplied to the plurality of circuit blocks having the same conductivity type channel active transistors.