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US 6,144,063 AGranted
Ultra-thin oxide for semiconductors
AssigneeAdvanced Micro Devices, Inc.
InventorsGeoffrey Choh-Fei Yeap, Zoran Krivokapic, Ming-Ren Lin
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Abstract
A semiconductor device having a transistor or capacitor with an ultra-thin oxide, which is thinner than 10 angstrom in thickness, is manufactured by eliminating a gate oxidation step in the processing and using the polysilicon reoxidation step to create the ultra-thin gate oxide by diffusion after formation of the gate.
Claims20
A structure for a semiconductor device comprising:
- a silicon substrate having a residual oxide thereon;
- a silicon deposition on said residual oxide on said silicon substrate;
- and
- an ultra-thin oxide diffused using said residual oxide between said silicon substrate and said silicon deposition, said ultra-thin oxide less than ten angstroms in thickness.
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A structure for a semiconductor device comprising:
- a silicon substrate having residual oxide thereon;
- a polycrystalline silicon deposition deposited directly on said residual oxide on said silicon substrate;
- and
- an ultra-thin oxide disposed between said silicon substrate and said polycrystalline silicon deposition by diffusion using said residual oxide during polysilicon reoxidation of said silicon substrate and said polycrystalline silicon deposition said ultra-thin oxide less than ten angstroms in thickness.
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A method of manufacturing a structure for a semiconductor device consisting of:
- preprocessing to clean a silicon substrate;
- depositing a polycrystalline silicon directly on said residual oxide on said silicon substrate;
- and
- diffusing an ultra-thin oxide between said silicon substrate and said polycrystalline silicon deposition using said residual oxide during a polysilicon reoxidation of said silicon substrate and said polycrystalline silicon deposition and ultra-thin oxide less than ten angstroms in thickness.
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A method of manufacturing a structure for a semiconductor device consisting of:
- preprocessing to clean a silicon substrate and leaving a residual oxide thereon;
- depositing polycrystalline silicon directly on said residual oxide on said silicon substrate;
- forming a gate from said deposited polycrystalline silicon;
- oxidizing said gate to form an ultra-thin oxide between said silicon substrate and said polycrystalline silicon deposition using said residual oxide during a polysilicon reoxidation of said silicon substrate and said gate, said ultra-thin oxide less than ten angstroms in thickness.
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Dependencies are inferred from the claim text.