Semiconductor device having a capacitor with a high dielectric constant film

A semiconductor device having a capacitor comprising:

• an insulating layer formed on a semiconductor substrate;
• a contact hole disposed at a predetermined position of said insulating layer;
• a first conductor extending to said insulating layer and electrically connected to said semiconductor substrate through said contact hole;
• a dielectric film having a predetermined lattice constant formed to cover at least a surface of said first conductor;
• a second conductor formed on said dielectric film to be opposite to said surface of said first conductor interposing said dielectric film;
• and
• a protection film disposed in adjacent to at least an end of a side surface of said first conductor for preventing said insulating layer from being in contact with said dielectric film at around the end of the side surface;
• wherein:
• said protection film is made of a material having a lattice constant same as or similar to that of said dielectric film;
• and
• said protection film has a lattice constant of 3.87 through 4.03 .ANG..

A semiconductor device having a capacitor comprising:

• an insulating layer formed on a semiconductor substrate;
• a contact hole disposed at a predetermined position of said insulating layer;
• a first conductor extending to said insulating layer and electrically connected to said semiconductor substrate through said contact hole;
• a dielectric film having a predetermined lattice constant formed to cover at least a surface of said first conductor;
• a second conductor formed on said dielectric film to be opposite to said surface of said first conductor interposing said dielectric film;
• and
• a protection film disposed in adjacent to at least an end of a side surface of said first conductor for preventing said insulating layer from being in contact with said dielectric film at around the end of the side surface;
• wherein:
• said protection film is made of a material having a lattice constant same as or similar to that of said dielectric film;
• and
• a ratio between the lattice constant of said protection film and the lattice constant of said dielectric film is substantially 1:2 or 2:1.

A semiconductor device comprising:

• an MOS transistor disposed on a semiconductor substrate and having source/drain areas;
• a memory cell having a capacitor;
• an insulating layer disposed to cover said semiconductor substrate and said MOS transistor;
• a contact hole disposed at a predetermined position on said insulating layer;
• a first conductor extending to said insulating layer and electrically connected to one of said source/drain areas of said MOS transistor through said contact hole;
• a dielectric film formed to cover at least a surface of said first conductor and having a predetermined lattice constant;
• a second conductor disposed on said dielectric film so as to be opposite to the surface of said first conductor interposing said dielectric film;
• and
• a protection film disposed in adjacent to at least an end of a side surface of said first conductor for preventing said insulating layer from being in contact with said dielectric film at around the end of the side surface;
• wherein:
• said protection film is made of a material having a lattice constant same as or similar to that of said dielectric film;
• said protection film is disposed to interpose between said first conductor and said insulating layer, and
• the first conductor or the second conductor is electrically connected to one of said source/drain areas of said MOS transistor through said contact hole.

A semiconductor device comprising:

• an MOS transistor disposed on a semiconductor substrate and having source/drain areas;
• a memory cell having a capacitor;
• an insulating layer disposed to cover said semiconductor substrate and said MOS transistor;
• a contact hole disposed at a predetermined position on said insulating layer;
• a first conductor extending to said insulating layer and electrically connected to one of said source/drain areas of said MOS transistor through said contact hole;
• a dielectric film formed to cover at least a surface of said first conductor and having a predetermined lattice constant;
• a second conductor disposed on said dielectric film so as to be opposite to the surface of said first conductor interposing said dielectric film;
• and
• a protection film disposed in adjacent to at least an end of a side surface of said first conductor for preventing said insulating layer from being in contact with said dielectric film at around the end of the side surface;
• wherein:
• said protection film is made of a material having a lattice constant same as or similar to that of said dielectric film;
• and
• said dielectric film is made of at least one of barium strontium titanate (BST), zinc titanate zirconate, strontium titanate, barium titanate, bismuth tantalate, and barium magnesium.

A semiconductor device comprising:

• an MOS transistor disposed on a semiconductor substrate and having source/drain areas;
• a memory cell having a capacitor;
• an insulating layer disposed to cover said semiconductor substrate and said MOS transistor;
• a contact hole disposed at a predetermined position on said insulating layer;
• a first conductor extending to said insulating layer and electrically connected to one of said source/drain areas of said MOS transistor through said contact hole;
• a dielectric film formed to cover at least a surface of said first conductor and having a predetermined lattice constant;
• a second conductor disposed on said dielectric film so as to be opposite to the surface of said first conductor interposing said dielectric film;
• and
• a protection film disposed in adjacent to at least an end of a side surface of said first conductor for preventing said insulating layer from being in contact with said dielectric film at around the end of the side surface;
• wherein:
• said protection film is made of a material having a lattice constant same as or similar to that of said dielectric film;
• and
• said protection film has a lattice constant of 3.87 through 4.03 .ANG..

A semiconductor device comprising:

• an MOS transistor disposed on a semiconductor substrate and having source/drain areas;
• a memory cell having a capacitor;
• an insulating layer disposed to cover said semiconductor substrate and said MOS transistor;
• a contact hole disposed at a predetermined position on said insulating layer;
• a first conductor extending to said insulating layer and electrically connected to one of said source/drain areas of said MOS transistor through said contact hole;
• a dielectric film formed to cover at least a surface of said first conductor and having a predetermined lattice constant;
• a second conductor disposed on said dielectric film so as to be opposite to the surface of said first conductor interposing said dielectric film;
• and
• a protection film disposed in adjacent to at least an end of a side surface of said first conductor for preventing said insulating layer from being in contact with said dielectric film at around the end of the side surface;
• wherein:
• said protection film is made of a material having a lattice constant same as or similar to that of said dielectric film;
• and
• a ratio between the lattice constant of said protection film and the lattice constant of said dielectric film is substantially 1:2 or 2:1.