Semiconductor device having a metal-insulator-metal capacitor
AssigneeNEC Corporation
InventorsTakeshi B Nishimura, Naotaka Iwata
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Abstract
A method for manufacturing a semiconductor device having a metal-insulator-metal (MIM) capacitor comprises the steps of forming a first dielectric film on a substrate, forming a MIM capacitor on the first dielectric film, forming a second dielectric film covering the MIM capacitor, selectively removing the first and second dielectric films to expose the substrate surface, surface treating using a hydrochloric acid solution, forming a third dielectric film on the second dielectric film and the substrate, and forming a transistor on the third dielectric film. The second dielectric film protects the capacitor insulator film of the MIM capacitor.
Claims8
A semiconductor device comprising a substrate, a metal-insulator-metal (MIM) capacitor overlying said substrate and having a bottom electrode, a capacitor insulator film and a top electrode, a first dielectric film covering said MIM capacitor and having an edge protruding from an edge of said bottom electrode, a second dielectric film formed on said first dielectric film and said substrate, said second dielectric film being made from a different material than said first dielectric film and having a first opening for exposing a portion of said substrate, and a transistor having an electrode in contact with said portion of said substrate through said first opening.
A semiconductor device, comprising:
- a substrate;
- a metal-insulator-metal (MIM) capacitor disposed over said substrate, said MIM capacitor having a bottom electrode, a high permittivity layer, and a top electrode;
- a first dielectric film at least partially covering said MIM capacitor and having an edge protruding from an edge of said bottom electrode;
- a second dielectric film disposed on said first dielectric film, said second dielectric film being made from a different material than said first dielectric film;
- a first opening formed in said first and second dielectric films that exposes a portion of said top electrode;
- and
- a second opening formed in said first and second dielectric films that exposes a portion of said bottom electrode.
Dependencies are inferred from the claim text.